@conference{811181,
  author = {Dmitry Veksler and Gennadi Bersuker and A Bushmaker and Maribeth Mason and Pragya Shrestha and Kin Cheung and Jason Campbell and T Rueckes and L Clevlend and H Luan and D Gilmer},
  title = {Memory update characteristics of carbon nanotube memristors (NRAM) under circuitry-relevant operation conditions},
  year = {2020},
  month = {2020-06-30 00:06:00},
  publisher = {2020 International Reliability Physics Symposium, Dallas, TX, US},
  url = {https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=929727},
  doi = {https://doi.org/10.1109/IRPS45951.2020.9128335},
  language = {en},
}