Cheung, K.
and Campbell, J.
(2018),
Non-tunneling origin of the 1/f noise in SiC MOSFET, 2018 International Conference on IC Design and Technology, Otranto, IT, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=925449
(Accessed December 13, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Non-tunneling origin of the 1/f noise in SiC MOSFET
Published
Author(s)
,
Abstract
Abstract: It has long been established that MOSFET random telegraph noise and the cumulative 1/f noise is the result of inversion charge tunneling in and out of bulk traps in the gate oxide near the interface. The tunneling nature is a key concept upon which the technique of trap profiling using 1/f noise is based on. In this work, we examine the tunneling pathways in SiC MOSFETs and show that the 1/f noise observed in SiC MOSFETs is likely of a completely different nature involving above band edge interface states that do not require tunneling to capture the inversion charge.Proceedings Title
2018 International Conference on IC Design and Technology
Conference Dates
June 4-6, 2018
Conference Location
Otranto, IT
Pub Type
Conferences
Download Paper
Keywords
1/f noise, RTN, SiC, MOSFET, local field
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created July 1, 2018, Updated April 19, 2022