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Wafer-Level Electrically Detected Magnetic Resonance:Magnetic Resonance in a Probing Station

Published

Author(s)

Duane J. McCrory, Mark A. Anders, Jason T. Ryan, Pragya R. Shrestha, Kin P. Cheung, Patrick M. Lenahan, Jason P. Campbell

Abstract

We report on a novel semiconductor reliability technique that incorporates an electrically detected magnetic resonance (EDMR) spectrometer within a conventional semiconductor wafer probing station. EDMR is an ultrasensitive electron paramagnetic resonance (EPR) technique with the capability to provide detailed physical and chemical information about reliability limiting defects in semiconductor devices. EDMR measurements have generally required a complex apparatus, not typically found in solid-state electronics laboratories. The union of a semiconductor probing station with EDMR allows powerful analytical measurements to be performed within individual devices at the wafer level. Our novel approach replaces the standard magnetic resonance microwave cavity or resonator with a small non-resonant near field microwave probe. Using this new approach we have demonstrated bipolar amplification effect (BAE) and spin dependent charge pumping (SDCP) [5] in various SiC based MOSFET structures. Although our studies have been limited to SiC based devices, the approach will be widely applicable to other types of MOSFETs, bipolar junction transistors, and various memory devices. The replacement of the resonance cavity with the very small non-resonant microwave probe greatly simplifies the EDMR detection scheme and allows for the incorporation of this powerful tool with a wafer probing station. We believe this scheme offers great promise for widespread utilization of EDMR in semiconductor reliability laboratories.
Citation
IEEE Transactions on Device and Materials Reliability
Volume
18

Keywords

EDMR, wafer level, semicondcutor defects, magnetic resonance spectroscopy, reliability
Created March 20, 2018, Updated September 20, 2018