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Slow- and rapid-scan frequency-swept electrically detected magnetic resonance of MOSFETs with a non-resonant microwave probe within a semiconductor wafer-probing station

Published

Author(s)

Duane J. McCrory, Mark A. Anders, Jason T. Ryan, Pragya R. Shrestha, Kin P. Cheung, Patrick M. Lenahan, Jason P. Campbell

Abstract

We report on a novel electron paramagnetic resonance (EPR) technique that merges electrically detected magnetic resonance (EDMR) with a conventional semiconductor wafer probing station. This union, which we refer to as wafer-level EDMR (WL-EDMR), allows EDMR measurements to be performed on an unaltered, fully-processed semiconductor wafer. Our measurements replace the conventional EPR microwave cavity or resonator with a very small non-resonant near-field microwave probe. Bipolar amplification effect (BAE), spin dependent charge pumping (SDCP), and spatially-resolved EDMR is demonstrated on various 4H-SiC MOSFET structures. These measurements are made via both “rapid scan” frequency-swept EDMR, and “slow scan” frequency swept EDMR. The elimination of the resonance cavity and incorporation with a wafer probing station greatly simplifies the EDMR detection scheme and offers promise for widespread EDMR adoption in semiconductor reliability laboratories.
Citation
Review of Scientific Instruments
Volume
90
Issue
1
Created January 14, 2019, Updated February 7, 2019