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Albert Davydov, Leonid A. Bendersky, Sergiy Krylyuk, Huairuo Zhang, Feng Zhang, Joerg Appenzeller, Pragya R. Shrestha, Kin P. Cheung, Jason P. Campbell
Abstract
We report multi-level MoTe2-based resistive random-access memory (RRAM) devices with switching speeds of less than 5 ns due to an electric-field induced 2H to 2Hd phase transition. Different from conventional RRAM devices based on ionic migration, the MoTe2-based RRAMs offer intrinsically better reliability and control. In comparison to phase change memory (PCM)-based devices that operate based on a change between an amorphous and a crystalline structure, our MoTe2-based RRAM devices allow faster switching due to a transition between two crystalline states. Moreover, utilization of atomically thin 2D materials allows for aggressive scaling and high-performance flexible electronics applications. Multi-level stable states and synaptic devices were realized in this work, and operation of the devices in their low-resistive, high-resistive and intrinsic states was quantitatively described by a novel model.
Davydov, A.
, Bendersky, L.
, Krylyuk, S.
, Zhang, H.
, Zhang, F.
, Appenzeller, J.
, Shrestha, P.
, Cheung, K.
and Campbell, J.
(2019),
An Ultra-fast Multi-level MoTe2-based RRAM, An Ultra-fast Multi-level MoTe2-based RRAM, san Francisco, CA, [online], https://doi.org/10.1109/IEDM.2018.8614512
(Accessed October 9, 2025)