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An Ultra-fast Multi-level MoTe2-based RRAM

Published

Author(s)

Albert Davydov, Leonid A. Bendersky, Sergiy Krylyuk, Huairuo Zhang, Feng Zhang, Joerg Appenzeller, Pragya R. Shrestha, Kin P. Cheung, Jason P. Campbell

Abstract

We report multi-level MoTe2-based resistive random-access memory (RRAM) devices with switching speeds of less than 5 ns due to an electric-field induced 2H to 2Hd phase transition. Different from conventional RRAM devices based on ionic migration, the MoTe2-based RRAMs offer intrinsically better reliability and control. In comparison to phase change memory (PCM)-based devices that operate based on a change between an amorphous and a crystalline structure, our MoTe2-based RRAM devices allow faster switching due to a transition between two crystalline states. Moreover, utilization of atomically thin 2D materials allows for aggressive scaling and high-performance flexible electronics applications. Multi-level stable states and synaptic devices were realized in this work, and operation of the devices in their low-resistive, high-resistive and intrinsic states was quantitatively described by a novel model.
Proceedings Title
An Ultra-fast Multi-level MoTe2-based RRAM
Conference Dates
January 12-December 5, 2018
Conference Location
san Francisco, CA
Conference Title
2018 IEEE International Electron Device Meeting

Keywords

2D materials, MoTe2, RRAM, phase change memory, synaptic devices, TEM

Citation

Davydov, A. , Bendersky, L. , Krylyuk, S. , Zhang, H. , Zhang, F. , Appenzeller, J. , Shrestha, P. , Cheung, K. and Campbell, J. (2019), An Ultra-fast Multi-level MoTe2-based RRAM, An Ultra-fast Multi-level MoTe2-based RRAM, san Francisco, CA, [online], https://doi.org/10.1109/IEDM.2018.8614512 (Accessed April 20, 2024)
Created January 17, 2019, Updated September 16, 2019