An Ultra-fast Multi-level MoTe2-based RRAM

Published

January 17, 2019

Author(s)

Albert Davydov, Leonid A. Bendersky, Sergiy Krylyuk, Huairuo Zhang, Feng Zhang, Joerg Appenzeller, Pragya R. Shrestha, Kin P. Cheung, Jason P. Campbell

Abstract

We report multi-level MoTe2-based resistive random-access memory (RRAM) devices with switching speeds of less than 5 ns due to an electric-field induced 2H to 2Hd phase transition. Different from conventional RRAM devices based on ionic migration, the MoTe2-based RRAMs offer intrinsically better reliability and control. In comparison to phase change memory (PCM)-based devices that operate based on a change between an amorphous and a crystalline structure, our MoTe2-based RRAM devices allow faster switching due to a transition between two crystalline states. Moreover, utilization of atomically thin 2D materials allows for aggressive scaling and high-performance flexible electronics applications. Multi-level stable states and synaptic devices were realized in this work, and operation of the devices in their low-resistive, high-resistive and intrinsic states was quantitatively described by a novel model.

Proceedings Title

An Ultra-fast Multi-level MoTe2-based RRAM

Conference Dates

January 12-December 5, 2018

Conference Location

san Francisco, CA

Conference Title

2018 IEEE International Electron Device Meeting

Pub Type

Conferences

Download Paper

https://doi.org/10.1109/IEDM.2018.8614512

Keywords

2D materials, MoTe2, RRAM, phase change memory, synaptic devices, TEM

Citation

Davydov, A. , Bendersky, L. , Krylyuk, S. , Zhang, H. , Zhang, F. , Appenzeller, J. , Shrestha, P. , Cheung, K. and Campbell, J. (2019), An Ultra-fast Multi-level MoTe2-based RRAM, An Ultra-fast Multi-level MoTe2-based RRAM, san Francisco, CA, [online], https://doi.org/10.1109/IEDM.2018.8614512 (Accessed October 26, 2025)