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An Ultra-fast Multi-level MoTe2-based RRAM



Albert Davydov, Leonid A. Bendersky, Sergiy Krylyuk, Huairuo Zhang, Feng Zhang, Joerg Appenzeller, Pragya R. Shrestha, Kin P. Cheung, Jason P. Campbell


We report multi-level MoTe2-based resistive random-access memory (RRAM) devices with switching speeds of less than 5 ns due to an electric-field induced 2H to 2Hd phase transition. Different from conventional RRAM devices based on ionic migration, the MoTe2-based RRAMs offer intrinsically better reliability and control. In comparison to phase change memory (PCM)-based devices that operate based on a change between an amorphous and a crystalline structure, our MoTe2-based RRAM devices allow faster switching due to a transition between two crystalline states. Moreover, utilization of atomically thin 2D materials allows for aggressive scaling and high-performance flexible electronics applications. Multi-level stable states and synaptic devices were realized in this work, and operation of the devices in their low-resistive, high-resistive and intrinsic states was quantitatively described by a novel model.
Proceedings Title
An Ultra-fast Multi-level MoTe2-based RRAM
Conference Dates
January 12-December 5, 2018
Conference Location
san Francisco, CA
Conference Title
2018 IEEE International Electron Device Meeting


2D materials, MoTe2, RRAM, phase change memory, synaptic devices, TEM
Created January 17, 2019, Updated September 16, 2019