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Record Fast Polarization Switching Observed in Ferroelectric Hafnium Oxide Crossbar Arrays



Pragya R. Shrestha, xiao Lyu, Mengwei Si, Jason P. Campbell, Kin P. Cheung, Peide Ye


The polarization switching speed of ferroelectric (FE) hafnium zirconium oxide (HZO) is studied with the device size down to sub-μm in lateral dimension. Ultrafast measurement of transient switching current on metal-ferroelectric-metal (MFM) device with a crossbar array or a single crossbar structure is performed to analyze the switching dynamics. A record fast polarization switching of 360 ps is achieved for 15 nm thick HZO with 0.1 μm2 crossbar array device structure. The observed record switching speed is found to be limited by domain wall propagation speed in the nucleation limited switching process. It is further verified after significant reduction of RC delay of the devices and the implementation of crossbar array structure.
Proceedings Title
IEEE Silicon Nanoelectronics Workshop
Conference Dates
June 13-14, 2020
Conference Location
Honolulu, HI


Ferroelectric, ultra-fast switching, crossbar, FeRAM, FeFET


Shrestha, P. , Lyu, X. , Si, M. , Campbell, J. , Cheung, K. and Ye, P. (2020), Record Fast Polarization Switching Observed in Ferroelectric Hafnium Oxide Crossbar Arrays, IEEE Silicon Nanoelectronics Workshop, Honolulu, HI (Accessed May 22, 2024)


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Created July 1, 2020, Updated July 6, 2020