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Influence of Lucky Defect Distributions on Early TDDB Failures in SiC Power MOSFETs

Published

Author(s)

Jaafar Chbili, Zakariae Chbili, Asahiko Matsuda, Kin (Charles) Cheung, Jason Ryan, Jason Campbell, M Lahbabi
Proceedings Title
2017 IEEE International Integrated Reliability Workshop Final Report
Conference Dates
October 8-12, 2017
Conference Location
South Lake Tahoe, CA, US
Conference Title
2017 IEEE International Integrated Reliability Workshop

Citation

Chbili, J. , Chbili, Z. , Matsuda, A. , Cheung, K. , Ryan, J. , Campbell, J. and Lahbabi, M. (2018), Influence of Lucky Defect Distributions on Early TDDB Failures in SiC Power MOSFETs, 2017 IEEE International Integrated Reliability Workshop Final Report, South Lake Tahoe, CA, US, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=924689 (Accessed July 3, 2022)
Created January 31, 2018, Updated April 19, 2022