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Ultrafast ID-VG Technique for Reliable Cryogenic Device Characterization

Published

Author(s)

Pragya Shrestha, Akin Akturk, Brian Hoskins, Advait Madhavan, Jason Campbell

Abstract

An in-depth understanding of the transient operation of devices at cryogenic temperatures remains experimentally elusive. However, the impact of these transients has recently become important in efforts to develop both electronics to support quantum information science as well as cryogenic high-performance computing. In this paper, we examine the charge trapping dynamics of devices operating at cryogenic temperatures by using cryogenic fast-IV measurements. Careful calibrations allow for the acquisition of accurate fast I-V and transconductance transients down to 20 ns for devices operating at or below 12 K. The combination of fast measurements and cold temperatures shifts the observable measurement window to reveal non-equilibrium charge trapping/de-trapping time dynamics of both fast and slow traps in high-k devices. The trap charging dynamics was monitored via shifts in both threshold voltage and transconductance which revealed fast-state contribution which is unique to device operation at these cryogenic conditions.
Citation
IEEE Journal of the Electron Devices Society
Volume
11

Keywords

Cryogenic-CMOS, transient device characterization, quantum electronics

Citation

Shrestha, P. , Akturk, A. , Hoskins, B. , Madhavan, A. and Campbell, J. (2023), Ultrafast ID-VG Technique for Reliable Cryogenic Device Characterization, IEEE Journal of the Electron Devices Society, [online], https://doi.org/10.1109/JEDS.2023.3259823, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=932679 (Accessed June 20, 2024)

Issues

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Created March 21, 2023, Updated April 24, 2023