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Glassy-Electret Random Access Memory – A naturally Nanoscale Memory Concept

Published

Author(s)

Jason Campbell, Pragya Shrestha, Vasileia Georgiou, D. E. Ioannou, Kin (Charles) Cheung

Abstract

Self-heating is a serious issue in state-of-the-art MOSFET technology. Much efforts are currently being made to combat this problem to enable further scaling. In this work, self-heating in nanoscale MOSFET is leveraged and enhanced to enable a new memory concept that can potentially meet the requirement of an universal memory.
Conference Dates
April 16-20, 2018
Conference Location
Hsinchu, TW
Conference Title
The 2018 International Symposium on VLSI Technology, Systems and Applications

Keywords

self-heating, ferroelectric, memory, scaling

Citation

Campbell, J. , Shrestha, P. , Georgiou, V. , Ioannou, D. and Cheung, K. (2018), Glassy-Electret Random Access Memory – A naturally Nanoscale Memory Concept, The 2018 International Symposium on VLSI Technology, Systems and Applications, Hsinchu, TW, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=925227 (Accessed April 15, 2024)
Created April 19, 2018, Updated April 11, 2022