Campbell, J.
, Shrestha, P.
, Georgiou, V.
, Ioannou, D.
and Cheung, K.
(2018),
Glassy-Electret Random Access Memory – A naturally Nanoscale Memory Concept, The 2018 International Symposium on VLSI Technology, Systems and Applications, Hsinchu, TW, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=925227
(Accessed September 12, 2024)
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Glassy-Electret Random Access Memory – A naturally Nanoscale Memory Concept
Published
Author(s)
, , Vasileia Georgiou, D. E. Ioannou,
Abstract
Self-heating is a serious issue in state-of-the-art MOSFET technology. Much efforts are currently being made to combat this problem to enable further scaling. In this work, self-heating in nanoscale MOSFET is leveraged and enhanced to enable a new memory concept that can potentially meet the requirement of an universal memory.Conference Dates
April 16-20, 2018
Conference Location
Hsinchu, TW
Conference Title
The 2018 International Symposium on VLSI Technology, Systems and Applications
Pub Type
Conferences
Download Paper
Keywords
self-heating, ferroelectric, memory, scaling
Citation
Issues
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Created April 19, 2018, Updated April 11, 2022