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Search Publications by: Eric C. Benck (Fed)

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Displaying 26 - 50 of 100

Deviations From Equilibrium of Thallium Level Populations in a Metal Halide Arc Lamp

July 1, 2004
Author(s)
D Karahourniotis, John J. Curry, E Drakakis, Eric C. Benck
The excitation equilibrium in a metal halide lamp was studied using a method based on optically thick lines without the assumption of local thermodynamic equilibrium (LTE). The lamp has a diameter of 15.4 mm, an electrode gap of 28 mm, and was operated

Continuous-Wave Terahertz Spectroscopy of Plasmas and Biomolecules

March 1, 2004
Author(s)
David F. Plusquellic, T M. Korter, Gerald T. Fraser, R J. Lavrich, Eric C. Benck, C R. Bucher, Angela R. Hight Walker, J L. Domenech
Continuous-wave linear-absorption spectroscopy based on THz radiation generated by solid-state photomixers has been applied to the investigation of the dynamics of biomolecules in polyethylene matrices and to line shape studies of HF for diagnostics of

Submillimeter-Wavelength Plasma Chemical Diagnostics for Semiconductor Manufacturing

September 1, 2003
Author(s)
Eric C. Benck, G Y. Golubiatnikow, Gerald T. Fraser, B Ji, S A. Motika, E J. Karwacki
Submillimeter-wavelength, linear-absorption spectroscopy has been applied to the chemical diagnostics of a reactive-ion etching plasma in a modified capacitively coupled Gaseous Electronics Conference (GEC) reactor. Approximately 1 mW of narrow-band (

C 4 F 6 1,3 Hexafluorobutadiene - A New Etching Gas: Studies on Material Compatibility, Behavior in Inductively Coupled Plasma and Etch Processes Performance

June 1, 2003
Author(s)
A Nicoletti, P Srinivasan, M Riva, Eric C. Benck, A N. Goyette, Yicheng Wang, J M. Kim, P Hsieh, A Athayde, Abhay Joshi
Hexafluoro-1,3-butadiene (C 4F 6) is a relatively new etch gas for the manufacturing of semiconductor devices, especially in critical etch processes that need high aspect ratios and selectivity. It is able to combine very high performance with a benign