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C4F6 - 1,3 Hexafluorobutadiene - A New Etching Gas: Studies on Material Compatibility, Behavior in an Inductively Coupled Plasma and Etch Process Performance

Published

Author(s)

A Nicoletti, P Srinivasan, M Riva, Eric C. Benck, A Goyette, Ying-ju Wang, J M. Kim, P Hsieh, A Athayde, Abhay Joshi
Citation
International Symp Plasma Chemistry

Citation

Nicoletti, A. , Srinivasan, P. , Riva, M. , Benck, E. , Goyette, A. , Wang, Y. , Kim, J. , Hsieh, P. , Athayde, A. and Joshi, A. (2003), C<sub>4</sub>F<sub>6</sub> - 1,3 Hexafluorobutadiene - A New Etching Gas: Studies on Material Compatibility, Behavior in an Inductively Coupled Plasma and Etch Process Performance, International Symp Plasma Chemistry (Accessed June 21, 2024)

Issues

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Created December 31, 2002, Updated October 12, 2021