Nicoletti, A.
, Srinivasan, P.
, Riva, M.
, Benck, E.
, Goyette, A.
, Wang, Y.
, Kim, J.
, Hsieh, P.
, Athayde, A.
and Joshi, A.
(2003),
C<sub>4</sub>F<sub>6</sub> - 1,3 Hexafluorobutadiene - A New Etching Gas: Studies on Material Compatibility, Behavior in an Inductively Coupled Plasma and Etch Process Performance, International Symp Plasma Chemistry
(Accessed May 18, 2025)
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C4F6 - 1,3 Hexafluorobutadiene - A New Etching Gas: Studies on Material Compatibility, Behavior in an Inductively Coupled Plasma and Etch Process Performance
Published
Author(s)
A Nicoletti, P Srinivasan, M Riva, , A Goyette, , J M. Kim, P Hsieh, A Athayde, Abhay Joshi
Citation
International Symp Plasma Chemistry
Pub Type
Others
Citation
Issues
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Created December 31, 2002, Updated October 12, 2021