Nicoletti, A.
, Srinivasan, P.
, Riva, M.
, Benck, E.
, Goyette, A.
, Wang, Y.
, Kim, J.
, Hsieh, P.
, Athayde, A.
and Joshi, A.
(2003),
C<sub>4</sub>F<sub>6</sub> - 1,3 Hexafluorobutadiene - A New Etching Gas: Studies on Material Compatibility, Behavior in an Inductively Coupled Plasma and Etch Process Performance, International Symp Plasma Chemistry
(Accessed May 1, 2025)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
C4F6 - 1,3 Hexafluorobutadiene - A New Etching Gas: Studies on Material Compatibility, Behavior in an Inductively Coupled Plasma and Etch Process Performance
Published
Author(s)
A Nicoletti, P Srinivasan, M Riva, , A Goyette, , J M. Kim, P Hsieh, A Athayde, Abhay Joshi
Citation
International Symp Plasma Chemistry
Pub Type
Others
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created December 31, 2002, Updated October 12, 2021