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Electronics

Semiconductors

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Displaying 401 - 425 of 748

Band Offset Determination of Atomic-Layer-Deposited Al2O3 and HfO2 on InP by Internal Photoemission and Spectroscopic Ellipsometry

January 9, 2013
Author(s)
Kun Xu, Oleg A. Kirillov, David J. Gundlach, Nhan V. Nguyen, Pei D. Ye, Min Xu, Lin Dong, Hong Sio
Band offsets at the interfaces of n- and p-type InP ((100) and (111)A) and atomic-layer-deposited (ALD) Al2O3 were measured with internal photoemission and spectroscopic ellipsometry. Similarly, the band offsets at the interface of semi-insulating InP (100

Structure and Dynamics Studies of Concentrated Micrometer-Sized Colloidal Suspensions

January 7, 2013
Author(s)
Fan Zhang, Andrew J. Allen, Lyle E. Levine, Jan Ilavsky, Gabrielle G. Long
We present an experimental study of the structural and dynamical properties of concentrated suspensions of a series of different sized polystyrene microspheres dispersed in glycerol for volume fraction concentrations between 10 % and 20 %. The static

A Unique Photoemission Method to Measure Semiconductor Heterojunction Band Offsets

January 2, 2013
Author(s)
Qin Zhang, Rui Li, Rusen Yan, Thomas Kosel, Grace Xing, Alan Seabaugh, Kun Xu, Oleg A. Kirillov, David J. Gundlach, Curt A. Richter, Nhan V. Nguyen
We report a unique way to measure the energy band offset of a heterojunction by exploiting the light absorption profile in the heterojunction under visible-ultraviolet internal photoemission. This method was used to successfully determine the band

Self-aligned multi-channel silicon nanowire field-effect transistors

December 12, 2012
Author(s)
Hao Zhu, Qiliang Li, Hui Yuan, Helmut Baumgart, D. E. Ioannou, Curt A. Richter
Si nanowire field effect transistors (SiNW FETs) with multiple nanowire channels and different gate lengths have been fabricated by using a directed assembly approach combined with standard photolithographic process. The electrical characteristics of SiNW

EVALUATING METHODS OF SHIPPING THIN SILICON WAFERS FOR 3D STACKED APPLICATIONS

November 7, 2012
Author(s)
Richard A. Allen, Urmi Ray, Vidhya Ramachandran, Iqbal Ali, David T. Read, Andreas Fehk?hrer, J?rgen Burggraf
An experiment was performed to develop a method for choosing appropriate packaging for shipping 300 mm silicon wafers thinned to 100 µm or less for three-dimensional stacked integrated circuits (3DS-ICs). 3DS-ICs hold the promise of improved performance

Measurement Science for "More-Than-Moore" Technology Reliability Assessments

October 12, 2012
Author(s)
Chukwudi A. Okoro, Jungjoon Ahn, Meagan V. Kelso, Pavel Kabos, Joseph Kopanski, Yaw S. Obeng
In this paper, we will present an overview of metrology issues and some of the techniques currently under development in our group at NIST, aimed at understanding some of the potential performance limiting issues in such highly integrated systems. We will

Current Compliance Circuit to Improve Variation in ON State Characteristics and to Minimize RESET Current

October 7, 2012
Author(s)
Pragya R. Shrestha, Adaku Ochia, Jason P. Campbell, Canute I. Vaz, Jihong Kim, Kin P. Cheung, Helmut Baumgart, Gary Harris
The wide distribution of ON and OFF values and high SET current in resistive memory is attributed to the high current overshoot during the SET process. In this paper we show a circuit which is capable of precisely limiting the current during SET process

Observation of spin-valve effect in Alq3 using a low work function metal

September 7, 2012
Author(s)
Hyuk-Jae Jang, Kurt Pernstich, David J. Gundlach, Oana Jurchescu, Curt A. Richter
We present the observation of magnetoresistance in Co/Ca/Alq3/Ca/NiFe spin-valve devices. Thin Ca layers contacting 150 nm thick Alq3 enable the injection of spin-polarized electrons into Alq3 due to engineering of the band alignment. The devices exhibit

Vertically Segregated Structure and Properties of small molecule-polymer blend semiconductors for organic thin film transistors

August 27, 2012
Author(s)
Nayool Shin, Dean DeLongchamp, Jihoon Kang, Regis J. Kline, Lee J. Richter, Vivek Prabhu, Balaji Purushothamanc, John E. Anthony, Do Y. Yoon
The phase-segregated structure and the electrical properties of thin film blends of the small-molecule semiconductor fluorinated 5,11-bis(triethylsilylethynyl) anthradithiophene with insulating binder polymers were studied for organic thin film transistor

3D Precision Imaging with a Terahertz-bandwidth, Comb-calibrated Swept Laser

August 26, 2012
Author(s)
Esther Baumann, Fabrizio R. Giorgetta, Ian R. Coddington, Kevin O. Knabe, Laura C. Sinclair, William C. Swann, Nathan R. Newbury
A frequency-comb and MEMS-based external-cavity laser are integrated into a THz-bandwidth LIDAR system. Range to a diffuse target is measured at sub-msec update times, a comb-based precision/accuracy of 100 nm, and a resolution of 150 microns. Example 3D

Microwave measurements and systematic circuit-model extraction of nanowire metal semiconductor field-effect transistors

August 24, 2012
Author(s)
Dazhen Gu, Thomas M. Wallis, Pavel Kabos, Paul T. Blanchard, Kristine A. Bertness, Norman A. Sanford
We present detailed on-wafer scattering parameter measurements and equivalent circuit modeling of metal semiconductor field effect transistor (MESFET) that incorporates a GaN nanowire (NW). A systematic procedure is established to extract intrinsic model

A high-bandwidth electromagnetic MEMS motion stage for scanning applications

August 23, 2012
Author(s)
Young M. Choi, Nicholas G. Dagalakis, Jason J. Gorman, Seung Ho Yang, Yong Sik Kim, Jae M. Yoo
This paper presents the design, fabrication and experimental results of an out-of-plane electromagnetic motion stage. The combination of electromagnetic actuation and a flexure-supported platform enables bidirectional motion with high precision as well as

Microstructure evolution and development of annealed Ni/Au contacts to GaN nanowires

August 21, 2012
Author(s)
Andrew M. Herrero, Paul T. Blanchard, Aric W. Sanders, Matthew D. Brubaker, Norman A. Sanford, Alexana Roshko, Kristine A. Bertness
The development of Ni/Au contacts to Mg-doped GaN nanowires (NWs) is examined. Current-voltage (I-V) measurements of these Mg-doped nanowire devices frequently exhibit a strong degradation after annealing in N 2/O 2. This degradation originates from the

Contact resistance of low-temperature carbon nanotube vertical interconnects

August 20, 2012
Author(s)
Ann C. Chiaramonti Debay, Sten Vollebregt, R. Ishihara, Hugo Schellevis, Kees Beenakker
In this work the electrical contact resistance and length dependant resistance of vertically aligned carbon nano- tubes (CNT) grown at 500 °C with high tube density (1011) are investigated by measuring samples with different CNT lengths. From scanning

Metrology for Nanosystems and Nanoelectronics Reliability Assessments

August 20, 2012
Author(s)
Yaw S. Obeng, Chukwudi A. Okoro, Joseph J. Kopanski
The traditional models and techniques for studying reliability in integrated circuits may not be appropriate for nanoelectronics and nanosystems. In this paper, we present an overview of a number of materials and metrology techniques currently under

Physical Model for Random Telegraph Noise Amplitudes and Implications

June 12, 2012
Author(s)
Richard G. Southwick, Kin P. Cheung, Jason P. Campbell, Serghei Drozdov, Jason T. Ryan, John S. Suehle, Anthony Oates
Random Telegraph Noise (RTN) has been shown to surpass random dopant fluctuations as a cause for decananometer device variability, through the measurement of a large number of ultra-scaled devices [1]. The most worrisome aspect of RTN is the tail of the
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