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Displaying 401 - 425 of 1445

The Role of Measurement Uncertainty in Achieving First-Pass Design Success

October 22, 2016
Author(s)
Dylan Williams, Richard Chamberlin, Wei Zhao, Jerome Cheron, Urteaga Miguel
We investigate the role of measurement uncertainty in achieving first-pass design success at microwave frequencies. We develop a model for state-of-the-art 250 nm heterojunction bipolar transistors, and demonstrate the propagation of correlated measurement

FINE-TUNING ELECTRICAL FLOW RATE SENSING IN DEFORMABLE CHANNELS

October 9, 2016
Author(s)
Pengfei Niu, Brian J. Nablo, Kiran Bhadriraju, Darwin Reyes-Hernandez
Here we present conclusive proof that when using electrical impedance to measure volumetric flow rate in polydimethylsiloxane (PDMS) microchannels a considerable fraction of the change in impedance, due to change in flow rate, is caused by the variation in

Rapid and Accurate C-V Measurements

October 1, 2016
Author(s)
Jihong Kim, Pragya Shrestha, Jason Campbell, Jason Ryan, David M. Nminibapiel, Joseph Kopanski, Kin P. Cheung
We report a new technique for the rapid measurement of full capacitance-voltage (C-V) characteristic curves. The displacement current from a 100 MHz applied sine-wave, which swings from accumulation to strong inversion, is digitized directly using an

Polymorphism in the 1:1 Charge-Transfer Complex DBTTF-TCNQ and Its Effects on Optical and Electronic Properties

September 14, 2016
Author(s)
Katelyn Goetz, Jun?ya Tsutsumi, Sujitra Pookpanratana, Jihua Chen, Curt A. Richter, Christina Hacker, Tatsuo Hasegawa, Oana Jurchescu
The organic charge-transfer (CT) complex dibenzotetrathiafulvalene - 7,7,8,8-tetracyanoquinodimethane (DBTTF-TCNQ) is found to crystallize in two polymorphs when grown by physical vapor transport: the known α-polymorph and a new structure, the β-polymorph

Atom Probe Tomography Analysis of Ag Doping in 2D Layered Material (PbSe)5(Bi2Se3)3

September 7, 2016
Author(s)
Arunima Singh, Albert Davydov, Francesca M. Tavazza, Lincoln J. Lauhon, Xiaochen Ren, Mercouri G. Kanatzidis, Lei Fang
Impurity doping in two-dimensional (2D) materials can provide a route to tuning electronic properties, so it is important to be able to determine the distribution of dopant atoms within and between layers. Here we report the tomographic mapping of dopants

Roles of Nanofiber Scaffold Structure and Chemistry in Directing Human Bone Marrow Stromal Cell Response

August 22, 2016
Author(s)
Sumona Sarkar, Bryan A. Baker, Desu Chen, Patrick S. Pine, Jennifer H. McDaniel, Marc L. Salit, Wolfgang Losert, Carl G. Simon Jr., Joy P. Dunkers
Nanofiber technology has emerged as a promising tool to recapitulate the native extracellular matrix structure; however the properties of nanofibers governing cell-material interactions are still largely undetermined. In this study we have systematically

Charge Carrier Dynamics and Mobility Determined by Time-Resolved Terahertz Spectroscopy on Films of Nano-to-Micrometer-Sized Colloidal Tin(II) Monosulfide

August 1, 2016
Author(s)
Brian Alberding, Adam Biacchi, Angela R. Hight Walker, Edwin J. Heilweil
Tin(II) monosulfide (SnS) is a semiconductor material with an intermediate band gap, high absorption coefficient is the visible range, and consists of earth abundant, non-toxic elements. For these reasons, SnS has generated much interest for incorporation

Coherent and incoherent coupling dynamics between neutral and charged excitons in Monolayer MoSe2

July 18, 2016
Author(s)
Kai Hao, Lixiang Xu, Philip Nagler, Akshay Singh, Kha Tran, Chandriker K. Dass, Rupert Huber, Tobias Korn, Xiaoqin Li, Galan Moody
The optical properties of semiconducting transition metal dichalcogenides are dominated by both neutral excitons (electron-hole pairs) and charged excitons (trions) that are stable even at room temperature. While trions directly influence charge transport

Modeling early breakdown failures of gate oxide in SiC power MOSFETs

July 14, 2016
Author(s)
Zakariae Chbili, Asahiko Matsuda, Jaafar Chbili, Jason T. Ryan, Jason P. Campbell, Mhamed Lahbabi, D. E. Ioannou, Kin P. Cheung
One of the most serious technology roadblocks for SiC DMOSFETs is the significant occurrence of early failures in time-dependent-dielectric-breakdown (TDDB) testing. Conventional screening methods have proved ineffective because the remaining population is

Advancing X-Ray Scattering Metrology Using Inverse Genetic Algorithms

July 7, 2016
Author(s)
Adam F. Hannon, Daniel F. Sunday, Donald A. Windover, Regis J. Kline
We compare the speed and effectiveness of two genetic optimization algorithms to the results of statistical sampling via a Markov Chain Monte Carlo algorithm to find which is the most robust method for determining real space structure in periodic gratings
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