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Contact resistance of low-temperature carbon nanotube vertical interconnects



Ann C. Chiaramonti Debay, Sten Vollebregt, R. Ishihara, Hugo Schellevis, Kees Beenakker


In this work the electrical contact resistance and length dependant resistance of vertically aligned carbon nano- tubes (CNT) grown at 500 °C with high tube density (1011) are investigated by measuring samples with different CNT lengths. From scanning electron microscopy images taken from cross- sections produced using a focused ion beam it was observed that the CNT tips are well embedded over a length of several hundred nm. The determined contact resistance of 18 kW is low, which we attribute to a combination of CNT tip embedding and tip growth mechanism. When we compare the CNT mean free path determined by Raman spectroscopy with that obtained from the electrical measurements it shows that multiple walls are conducting in parallel per CNT.
IEEE Transactions on Nanotechnology


carbon nanotube, interconnect, via


Chiaramonti, A. , Vollebregt, S. , Ishihara, R. , Schellevis, H. and Beenakker, K. (2012), Contact resistance of low-temperature carbon nanotube vertical interconnects, IEEE Transactions on Nanotechnology (Accessed May 30, 2024)


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Created August 20, 2012, Updated February 19, 2017