Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Contact resistance of low-temperature carbon nanotube vertical interconnects

Published

Author(s)

Ann C. Chiaramonti Debay, Sten Vollebregt, R. Ishihara, Hugo Schellevis, Kees Beenakker

Abstract

In this work the electrical contact resistance and length dependant resistance of vertically aligned carbon nano- tubes (CNT) grown at 500 °C with high tube density (1011) are investigated by measuring samples with different CNT lengths. From scanning electron microscopy images taken from cross- sections produced using a focused ion beam it was observed that the CNT tips are well embedded over a length of several hundred nm. The determined contact resistance of 18 kW is low, which we attribute to a combination of CNT tip embedding and tip growth mechanism. When we compare the CNT mean free path determined by Raman spectroscopy with that obtained from the electrical measurements it shows that multiple walls are conducting in parallel per CNT.
Citation
IEEE Transactions on Nanotechnology

Keywords

carbon nanotube, interconnect, via

Citation

Chiaramonti, A. , Vollebregt, S. , Ishihara, R. , Schellevis, H. and Beenakker, K. (2012), Contact resistance of low-temperature carbon nanotube vertical interconnects, IEEE Transactions on Nanotechnology (Accessed May 30, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created August 20, 2012, Updated February 19, 2017