Zhang, Q.
, Li, R.
, Yan, R.
, Kosel, T.
, Xing, G.
, Seabaugh, A.
, Xu, K.
, Kirillov, O.
, Gundlach, D.
, Richter, C.
and Nguyen, N.
(2013),
A Unique Photoemission Method to Measure Semiconductor Heterojunction Band Offsets, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=912713
(Accessed October 12, 2025)
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A Unique Photoemission Method to Measure Semiconductor Heterojunction Band Offsets
Published
Author(s)
, Rui Li, , Thomas Kosel, Grace Xing, Alan Seabaugh, , , , ,
Abstract
We report a unique way to measure the energy band offset of a heterojunction by exploiting the light absorption profile in the heterojunction under visible-ultraviolet internal photoemission. This method was used to successfully determine the band alignment of W/Al2O3/n+InAs/p+Al0.45Ga0.55Sb heterojunctions that are of interest for tunnel field-effect transistors. The barrier heights from the InAs and Al0.45Ga0.55Sb valence band maxima to the Al2O3 conduction band minimum are found to be 3.24 eV ± 0.05 eV and 2.79 eV ± 0.05 eV, respectively, yielding a 0.4 eV ± 0.1 eV offset at the InAs/AlGaSb interface. This novel approach can readily be applied to characterize a wide range of other semiconductor heterojunctions.Citation
Applied Physics Letters
Pub Type
Journals
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Keywords
Internal photoemission, heterojunction, band offset
Citation
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Created January 2, 2013, Updated June 12, 2017