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Observation of spin-valve effect in Alq3 using a low work function metal



Hyuk-Jae Jang, Kurt Pernstich, David J. Gundlach, Oana Jurchescu, Curt A. Richter


We present the observation of magnetoresistance in Co/Ca/Alq3/Ca/NiFe spin-valve devices. Thin Ca layers contacting 150 nm thick Alq3 enable the injection of spin-polarized electrons into Alq3 due to engineering of the band alignment. The devices exhibit symmetric current-voltage (I-V) characteristics indicating identical metal contacts on Alq3 and up to 4% of positive magnetoresistance was observed at 4.5K. In contrast, simultaneously fabricated Co/Alq3/NiFe devices displayed asymmetric I-V curves due to the different metal electrodes, and spin-valve effects were not observed above noise level.
Applied Physics Letters


Jang, H. , Pernstich, K. , Gundlach, D. , Jurchescu, O. and Richter, C. (2012), Observation of spin-valve effect in Alq3 using a low work function metal, Applied Physics Letters (Accessed April 23, 2024)
Created September 7, 2012, Updated February 19, 2017