Gallium Nitride Nanowires for On-Chip Optical Interconnects on Ex-Situ Substrates

Published

January 16, 2013

Author(s)

Matthew D. Brubaker, Paul T. Blanchard, John B. Schlager, Aric W. Sanders, Alexana Roshko, Shannon M. Duff, Jason Gray, Victor M. Bright, Norman A. Sanford, Kristine A. Bertness

Abstract

In this letter we report on the fabrication, device characteristics, and optical coupling of a two-nanowire device comprising light-emitting diode and photoconductive GaN nanowires. Axial p-n junction GaN nanowires were grown by molecular beam epitaxy, transferred to an ex-situ substrate, and selectively contacted to form discrete optical source or detector nanowire components. The optical coupling demonstrated for this device could provide new opportunities for integration of optical interconnects with traditional CMOS and MEMS devices.

Citation

Nano Letters

Pub Type

Journals

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DOI Link

Keywords

Nanowires, gallium nitride, light-emitting diodes, photoconductivity, optical interconnects

Citation

Brubaker, M. , Blanchard, P. , Schlager, J. , Sanders, A. , Roshko, A. , Duff, S. , Gray, J. , Bright, V. , Sanford, N. and Bertness, K. (2013), Gallium Nitride Nanowires for On-Chip Optical Interconnects on Ex-Situ Substrates, Nano Letters, [online], https://doi.org/10.1021/nl303510h (Accessed October 9, 2025)