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Electronics

Semiconductors

Search Publications

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Displaying 376 - 400 of 748

The Impact of Characteristic Impedance on Waveform Calibrations

June 7, 2013
Author(s)
Dylan F. Williams, Jeffrey A. Jargon, Paul D. Hale
We examine the impact of the characteristic impedance on mismatch corrections for temporal waveform calibrations based on high-speed electro-optic sampling measurements. We show that failing to measure and account for the characteristic impedance of

Effect of Organic SAMs on the Evolution of Strength of Silicon Nanostructures

June 3, 2013
Author(s)
Scott Grutzik, Brian G. Bush, Frank W. DelRio, Richard S. Gates, Melissa Hines, Alan Zehnder
The ability to accurately predict the strength of nanoscale, single crystal structures is critical in micro- and nano-electromechanical systems (MEMS and NEMS) design. Because of the small length scales involved failure does not always follow the same

Accelerated Stress Test Assessment of Through-Silicon Vias Using RF Signals

June 1, 2013
Author(s)
Chukwudi A. Okoro, Pavel Kabos, Jan Obrzut, Klaus Hummler, Yaw S. Obeng
In this work, radio frequency (RF) signal is demonstrated as an effective metrology tool for the assessment of the effect of thermal cycling on the reliability of through-silicon via (TSV) stacked dies. It was found that RF signal integrity of TSV daisy

Reliability Monitoring For Highly Leaky Devices

May 31, 2013
Author(s)
Jason T. Ryan, Jason P. Campbell, Kin P. Cheung, John S. Suehle, Richard Southwick, Anthony Oates
We demonstrate a new charge pumping (CP) methodology, frequency modulated CP (FMCP), that robustly treats metrology challenges associated with high gate leakage current. By moving to an AC coupled measurement, we are able to easily resolve small CP signals

Use of RF-Based Technique as a Metrology Tool for TSV Reliability Analysis

May 28, 2013
Author(s)
Chukwudi A. Okoro, Yaw S. Obeng, Jan Obrzut, Pavel Kabos, Klaus Hummler
In this work, we used radio frequency (RF) based measurement technique is used as a prognostic tool for the assessment of the effect of thermal cycling on the reliability of through-silicon via (TSV) stacked dies. It was found that RF signal integrity in

X-Ray Micro-Beam Diffraction Determination of Full Stress Tensors in Cu TSVs

May 28, 2013
Author(s)
Chukwudi A. Okoro, Lyle E. Levine, Oleg A. Kirillov, Yaw S. Obeng, Ruqing Xu, Jonathan Z. Tischler, Wenjun Liu, Klaus Hummler
We report the first non-destructive, depth resolved determination of the full stress tensor in Cu through-silicon vias (TSVs), using synchrotron based micro-beam X-ray diffraction. Two adjacent Cu TSVs were studied; one deliberately capped with SiO2, the

Studies of photoconductivity and FET behavior in examining drift mobility, surface depletion, and transient effects in Si-doped GaN nanowires examined in vacuum and air

May 3, 2013
Author(s)
Norman A. Sanford, Lawrence H. Robins, Paul T. Blanchard, K. Soria, B. Klein, Kristine A. Bertness, John B. Schlager, Aric W. Sanders
Variable intensity photoconductivity (PC) performed under vacuum at 325 nm was used to estimate drift mobility and negative surface charge density sigma for c-axis oriented Si-doped GaN nanowires (NWs). In this approach we assumed that sigma was

Thermo-Mechanical Characterization of AuIn Transient Liquid Phase Bonding Die-Attach

April 9, 2013
Author(s)
Brian J. Grummel, Habib A. Mustain, Z. J. Shen, Allen R. Hefner Jr.
In next-generation wide-bandgap power electronics, the semiconductor device die-attach is of critical importance, for this transient liquid phase (TLP) bonding is a promising and effective die-attach technique. In this work, the thermal and mechanical

Critical Dimension small angel X-ray scattering measurements of FinFET and 3D memory structures

April 8, 2013
Author(s)
Regis J. Kline, Daniel F. Sunday, Chengqing C. Wang, Wen-Li Wu, Charlie Settens, Bunday Benjamin, Brad Thiel, Matyi Richard
Critical dimension small angle X-ray scattering (CD-SAXS) has been identified as a potential solution for measurement of nanoscale lithographic features by interrogating structures with sub-nanometer wavelength radiation in transmission geometry. The most

Graphene as Transparent Electrode for Direct Observation of Hole Photoemission from Silicon to Oxide

March 27, 2013
Author(s)
Rusen Yan, Qin Zhang, Oleg A. Kirillov, Wei Li, James I. Basham, Alexander G. Boosalis, Xuelei X. Liang, Debdeep Jena, Curt A. Richter, Alan C. Seabaugh, David J. Gundlach, Huili G. Xing, Nhan V. Nguyen
The outstanding electrical and optical properties of graphene make it an excellent alternative as a transparent electrode. Here we demonstrate the application of graphene as collector material in internal photoemission (IPE) spectroscopy; enabling the

The Art in Science of microTAS (Editorial)

March 12, 2013
Author(s)
Michael Gaitan
The discovery of a natural phenomenon unveils a curtain of ignorance from what has always existed. However, the creation of art requires the use of materials and knowledge combined with artistic inspiration to create a work of aesthetic appeal. By this

Frequency-Modulated Charge Pumping: Defect Measurements with High Gate Leakage

February 28, 2013
Author(s)
Jason T. Ryan, Richard G. Southwick, Jason P. Campbell, Kin P. Cheung, John S. Suehle, Anthony Oates
Charge pumping is one of the most relied upon techniques used to quantify interface defects in metal-oxide-semiconductor devices. However, conventional charge pumping is easily hindered by excessive gate leakage currents which render the technique

Organosilicate Polymer E-Beam Resists with High Resolution, Sensitivity and Stability

February 28, 2013
Author(s)
Christopher Soles, Richard Kasica, Hae-Jeong Lee, Jae H. Sim, Sung-Il Lee, Ki-Bum Kim, Hyun-Mi Kim, Do Y. Yoon
Hydrogen silsesquioxane (HSQ) is an attractive electron-beam (e-beam) resist for sub-20 nm lithography due to its high resolution, excellent line-edge-roughness (LER), and good plasma etch resistance. However, the sensitivity and long-term stability of HSQ

Frequency Dependent Charge Pumping -- A Defect Depth Profiling Tool?

January 31, 2013
Author(s)
Jason T. Ryan, Richard G. Southwick, Jason P. Campbell, Kin P. Cheung, John S. Suehle
We investigate the validity of using frequency-dependent charge pumping (FD-CP) to determine bulk defect depth distributions. Using simple physical arguments we conclude that: (1) the effective tunneling length to a bulk defect can be very different than

Gallium Nitride Nanowires for On-Chip Optical Interconnects on Ex-Situ Substrates

January 16, 2013
Author(s)
Matthew D. Brubaker, Paul T. Blanchard, John B. Schlager, Aric W. Sanders, Alexana Roshko, Shannon M. Duff, Jason Gray, Victor M. Bright, Norman A. Sanford, Kristine A. Bertness
In this letter we report on the fabrication, device characteristics, and optical coupling of a two-nanowire device comprising light-emitting diode and photoconductive GaN nanowires. Axial p-n junction GaN nanowires were grown by molecular beam epitaxy
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