U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Electronics

Semiconductors

Search Publications

Search Title, Abstract, Conference, Citation, Keyword or Author
  • Published Date
Displaying 376 - 400 of 1445

Structure and Order in Organic Semiconductors

January 17, 2017
Author(s)
Chad R. Snyder, Dean M. DeLongchamp, Ryan C. Nieuwendaal, Andrew A. Herzing
Several techniques for characterizing semiconducting polymer order on different length scales are presented, including (1) differential scanning calorimetry (DSC), (2) solid state nuclear magnetic resonance spectroscopy (NMR), (3) transmission electron

Advances in RRAM technology: identifying and mitigating roadblocks

January 13, 2017
Author(s)
Dmitry Veksler, Gennadi Bersuker
The filament-based RRAM has demonstrated superior scalability, endurance, low power operation, retention, and operating speed. A challenge navigating trade-offs between high density, low switching power, and stability can be addressed by capitalizing on

InGaAs Inversion Layer Mobility and Interface Trap Density from Gated Hall Measurements

December 12, 2016
Author(s)
Thenappan Chidambaram, Dmitry Veksler, S Madisetti, Michael Yakimov, Vadim Tokranov, Serge Oktyabrskiy
In this work, we use gated Hall method for direct measurement of free carrier density and electron mobility in inversion InGaAs MOSFET channels. At room temperature, the highest Hall mobility of 1800 cm2/Vs is observed at electron density in the channel

Atomically precise device fabrication

December 7, 2016
Author(s)
Joseph A. Hagmann, Xiqiao Wang, Pradeep N. Namboodiri, Richard M. Silver, Curt A. Richter
An improved capacity to control matter at the atomic scale is central to the advancement of nanotechnology. The complementary metal-oxide-semiconductor (CMOS) devices that power existing computing technology, which continue to scale down in size as

Comparison of CBED and ABF Atomic Imaging for GaN Polarity Determination

November 8, 2016
Author(s)
Alexana Roshko, Matthew D. Brubaker, Paul T. Blanchard, Kristine A. Bertness, Todd E. Harvey, Igor Levin, R.H. Geiss
A comparison of two electron microscopy techniques used to determine the polarity of GaN nanowires is presented. The techniques are convergent beam electron diffraction (CBED) in TEM mode and annular bright field (ABF) imaging in aberration corrected STEM

Calibration of Effective Tunneling Bandgap in GaAsSb/InGaAs for improved TFET Performance Prediction

November 3, 2016
Author(s)
Quentin Smets, Anne S. Verhulst, Salim El Kazzi, David J. Gundlach, Curt A. Richter, Anda Mocuta, Nadine Collaert, Aaron Thean, Marc Heyns
The effective bandgap for heterojunction band-to-band tunneling (Eg,eff) is a crucial design parameter for heterojunction TFET. However, there is significant uncertainty on Eg,eff, especially for In0.53Ga0.47As/GaAs0.5Sb0.5. This makes TFET performance
Was this page helpful?