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Electronics

Semiconductors

Search Publications

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Displaying 351 - 375 of 748

Measuring order in regioregular poly(3-hexylthiophene) with solid-state 13C CPMAS NMR

January 10, 2014
Author(s)
Ryan C. Nieuwendaal, Chad R. Snyder, Dean M. DeLongchamp
We report on details of molecular packing in high molar mass poly(3-hexylthiophene) (P3HT) by solid-state 13C {1H} cross-polarization magic angle spinning (CPMAS) NMR measurements. The degree of polymer order was estimated for two films of varied drying

Epitaxial Si encapsulation of highly misfitting SiC quantum dot arrays formed on Si (001)

January 8, 2014
Author(s)
Christopher W. Petz, Dongyue Yang, Alline Myers, Jeremey Levy, Jerrold Floro
This work examines Si overgrowth to encapsulate 3C-SiC quantum dot arrays epitaxially grown on Si substrates. Using transmission electron microscopy we show how the crystalline quality of the Si cap depends on the growth conditions. Overgrowth at 300ºC

Tunable electrical conductivity in metal-organic framework thin film devices

January 3, 2014
Author(s)
Albert A. Talin, Andrea Centrone, Alexandra C. Ford, Michael E. Foster, Vitalie Stavila, Paul M. Haney, Robert A. Kinney, Veronika Szalai, Farid El Gabaly, Heayoung Yoon, Francois Leonard, Mark Allendorf
We report a strategy for realizing tunable electrical conductivity in MOFs in which the nanopores are infiltrated with redox-active, conjugated guest molecules. This approach is demonstrated using thin-film devices of the MOF Cu3(BTC)2 (also known as HKUST

Atomic Scale Defects Associated with the Negative Bias Temperature Instability

January 1, 2014
Author(s)
Jason P. Campbell, P. M. Lenahan
We utilize magnetic resonance measurements to identify the fundamental atomic-scale defect structures involved in the negative bias temperature instability. In gate stacks composed of pure silicon dioxide, we find a degradation mechanism directly involving

Semiconductor-based detectors

December 13, 2013
Author(s)
Sergio Cova, Massimo Ghioni, Mark A. Itzler, Joshua Bienfang, Alessandro Restelli
There is nowadays a widespread and growing interest in low-level light detection and imaging. This interest is driven by the need for high sensitivity in various scientific and industrial applications such as fluorescence spectroscopy in life and material

Dielectrophoretic Trapping of P19 Cells on Indium Tin Oxide based Microelectrode Arrays

November 8, 2013
Author(s)
Aveek Gangopadhyay, Saugandhika Minnikanti, Darwin Reyes-Hernandez, Mulpuri V. Rao, Nathalia Peixoto
A microfabricated device comprised of a microelectrode array (MEA) and a microfluidic channel is presented here for the purpose of trapping cells using positive dielectrophoresis (DEP). Transparent indium tin oxide (ITO) electrodes are patterned in an

Three-dimensional deep sub-wavelength defect detection using (lambda) = 193 nm optical microscopy

October 25, 2013
Author(s)
Bryan M. Barnes, Martin Y. Sohn, Francois R. Goasmat, Hui Zhou, Andras Vladar, Richard M. Silver, Abraham Arceo
Identifying defects in photolithographic patterning is a persistent challenge in semiconductor manufacturing. Well-established optical methods in current use are jeopardized by upcoming sub-20 nm device dimensions. Volumetric processing of focus-resolved

Frictional properties of native and functionalized type I collagen thin films

October 2, 2013
Author(s)
Koo-hyun Chung, Antony Chen, Christopher Anderton, Kiran Bhadriraju, Anne L. Plant, Brian G. Bush, Robert F. Cook, Frank W. DelRio
Frictional properties of native and fibronectin (FN)-functionalized type I collagen (COL) thin films were studied via atomic force microscopy. The COL lateral contact stiffness was dependent only on the hydration state, indicating that shear deformation

Unexpected effect of thermal storage observed on SiC power DMOSFET

September 29, 2013
Author(s)
Zakariae Chbili, Pragya R. Shrestha, Jason P. Campbell, John S. Suehle, Kin P. Cheung, D. E. Ioannou
In this paper we report an unexpected improvement in the SiC DMOSFET transistor characteristics after a long temperature treatment at 150 C. The evolution of the device characteristics during a TDDB stress is compared to that after an elevated temperature

Fourier Domain Optical Tool Normalization for Quantitative Parametric Image Reconstruction

September 5, 2013
Author(s)
Jing Qin, Richard M. Silver, Bryan M. Barnes, Hui Zhou, Francois R. Goasmat
There has been much recent work in developing advanced optical metrology methods that use imaging optics for critical dimension measurements and defect detection. Sensitivity to nanometer scale changes has been observed when measuring critical dimensions

Analysis of Implanted Silicon Dopant Profiles

September 1, 2013
Author(s)
B. P. Geiser, Eric B. Steel, Karen T. Henry, D. Olson, T.J. Prosa
Atom probe tomography implant dose measurements are reported for National Institute of Standards and Technology Standard Reference Material 2134 (As implant). Efforts were taken to manufacture specimens with limited variation in size and shape to minimize

A Prescription for Sub-Millimeter-Wave Transistor Characterization

July 1, 2013
Author(s)
Dylan F. Williams, Adam C. Young, Urteaga Miguel
We present an approach for characterizing transistors embedded in microstrip lines formed on a thin bisbenzocyclobutene-based (BCB) monomers film at sub-millimeter-wave frequencies. We demonstrate the approach to 750 GHz and estimate the uncertainty of the

Calibration-Kit Design for Millimeter-Wave Silicon Integrated Circuits

July 1, 2013
Author(s)
Dylan F. Williams, Phillip Corson, Sharma Jahnavi, Krishnaswamy Harish, Tai Wei, George Zacharias, Ricketts David, Watson Paul, Dacquay Eric, Voinigescu Sorin
We study and present design guidelines for thru-reflect-line vector-network-analyzer calibration kits used for characterizing circuits and transistors fabricated on silicon integrated circuits at millimeter-wave frequencies. We compare contact-pad designs

Harnessing 3D Scattered Optical Fields for sub-20 nm Defect Detection

June 24, 2013
Author(s)
Bryan M. Barnes, Martin Y. Sohn, Francois R. Goasmat, Hui Zhou, Richard M. Silver, Abraham Arceo
Experimental imaging at =193 nm of sub-resolved defects performed at several focus positions yields a volume of spatial and intensity data. Defects are located in a differential volume, given a reference, with up to 5x increase in sensitivity.
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