NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.

Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.

U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

PUBLICATIONS

X-ray Scattering Critical Dimensional Metrology using a Compact X-ray Source for Next Generation Semiconductor Devices

Published

Author(s)

Regis J. Kline, Daniel F. Sunday, Donald A. Windover, Bunday Benjamin
Citation
Journal of Micro/Nanolithography, MEMS, and MOEMS
Pub Type
Journals

Keywords

X-ray scattering, dimensional metrology, semiconductor industry
Semiconductors and Nanomaterials

Citation

Kline, R. , Sunday, D. , Windover, D. and Benjamin, B. (2017), X-ray Scattering Critical Dimensional Metrology using a Compact X-ray Source for Next Generation Semiconductor Devices, Journal of Micro/Nanolithography, MEMS, and MOEMS (Accessed October 14, 2025)

Issues

If you have any questions about this publication or are having problems accessing it, please contact [email protected].

Created February 8, 2017, Updated March 27, 2017
Was this page helpful?