Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Characteristics of Resistive Memory Read Fluctuations in Endurance Cycling

Published

Author(s)

David M. Nminibapiel, Dmitry Veksler, Pragya R. Shrestha, Jihong Kim, Jason P. Campbell, Jason T. Ryan, Helmut Baumgart, Kin P. Cheung

Abstract

We report on new fluctuation dynamics of the high resistance state of Hafnia-based RRAM devices after RESET. We observe that large amplitude fluctuations occur more frequently immediately after programming and their frequency of occurrence decays in the tens of microseconds. The fluctuation amplitude, on the other hand, does not decay noticeably over the entire millisecond read time. While post-programming instability and post-programming resistance dispersion have both been reported in the literature, the relaxation in frequency of occurrence without a commensurate amplitude decay is new. Since picosecond pulses were used for our RESET operation, post-programming thermalization occurs on the nanosecond time scale. This clearly eliminates a thermally driven mechanism as the cause of the observed fluctuation behavior. Furthermore, reducing the READ voltage by tenfold does not have any effect and also eliminates read disturb as possible cause.
Citation
Electron Device Letters
Volume
38
Issue
3

Keywords

Fluctuations, Noise, Read protocol, RRAM

Citation

Nminibapiel, D. , Veksler, D. , Shrestha, P. , Kim, J. , Campbell, J. , Ryan, J. , Baumgart, H. and Cheung, K. (2017), Characteristics of Resistive Memory Read Fluctuations in Endurance Cycling, Electron Device Letters (Accessed July 6, 2022)
Created January 23, 2017, Updated February 19, 2017