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Advances in RRAM technology: identifying and mitigating roadblocks

Published

Author(s)

Dmitry Veksler, Gennadi Bersuker

Abstract

The filament-based RRAM has demonstrated superior scalability, endurance, low power operation, retention, and operating speed. A challenge navigating trade-offs between high density, low switching power, and stability can be addressed by capitalizing on developed understanding of material properties and operation conditions controlling performance of the crystalline HfOx-based RRAM. Optimization of grain sizes and GB composition enables device scaling and their operations under extremely high frequencies and low power consumption conditions. In particular, reducing parasitics and implementing compliance-free pulsed forming and switching technique provides an effective control over the filament resistance, and hence, operation current. Read current instability, manifesting itself as a random telegraph noise (RTN) observed in a read current, associated with the electron trapping/detrapping at the defect sites in the dielectric film surrounding the conductive filament, can be mitigated via a fabrication process, as well as tuning the operating conditions. Further optimization of RAM materials and operating conditions will open the path to their implementation in exascale neuromorophic computing systems.
Citation
Frontiers in Electronics:Selected Papers from the Workshop on Frontiers in Electronics 2015 (WOFE-15)
Publisher Info
World Scientific Publishing Co., Inc., Hackensack, NJ

Keywords

RRAM, reliability, dielectric defects

Citation

Veksler, D. and Bersuker, G. (2017), Advances in RRAM technology: identifying and mitigating roadblocks, Frontiers in Electronics:Selected Papers from the Workshop on Frontiers in Electronics 2015 (WOFE-15), World Scientific Publishing Co., Inc., Hackensack, NJ (Accessed June 23, 2024)

Issues

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Created January 13, 2017, Updated September 1, 2017