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Rethinking Charge trapping and detrapping dynamic without the sheet-charge approximation

Published

Author(s)

Kin (Charles) Cheung, Jason Campbell, Dmitry Veksler

Abstract

Charge-trapping/detrapping are common occurrences that affect MOSFET performance and reliability. To understand a broad range of MOSFET phenomena, we need to think through the dynamic of charge-trapping/detrapping. The standard approach to treat oxide trapped charge is to think of them as a thin sheet of uniform charge at the centroid location [1]. The effect of this sheet charge approximation is a uniform band-bending within the oxide as well as in the semiconductor near the interface. This picture completely dominated all discussions of charge- trapping in the literature. Physically, the trapped charge's strong electric field greatly changes the electrostatic in its immediate surrounding. With this local field picture the charge emission (detrapping) becomes a very different process. In this paper, we explore what this mean and how to reconcile experimental observations using RTN as an example.
Proceedings Title
47th IEEE Semiconductor Interface Specialists Conference
Conference Dates
December 8-10, 2016
Conference Location
San Diego, CA, US

Keywords

MOSFET, RTN, local field, charge-detrapping

Citation

Cheung, K. , Campbell, J. and Veksler, D. (2016), Rethinking Charge trapping and detrapping dynamic without the sheet-charge approximation, 47th IEEE Semiconductor Interface Specialists Conference, San Diego, CA, US, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=921971 (Accessed May 24, 2024)

Issues

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Created December 5, 2016, Updated April 8, 2022