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Electronics

Semiconductors

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Displaying 426 - 450 of 748

Channel Length-Dependent Series Resistance?

June 10, 2012
Author(s)
Jason P. Campbell, Kin P. Cheung, Serghei Drozdov, Richard G. Southwick, Jason T. Ryan, Tony Oates, John S. Suehle
A recently developed series resistance (RSD) extraction procedure from a single nanoscale device is shown to be highly robust. Despite these virtues, the technique unexpectedly results in a channel length-dependent RSD which is observed across a wide range

LTB4 IS A SIGNAL RELAY MOLECULE DURING NEUTROPHIL CHEMOTAXIS

May 15, 2012
Author(s)
Philippe V. Afonso, Mirkka Janka-Junttila, Young Jong Lee, Colin P. McCann, Charlotte M. Oliver, Khaled A. Aamer, Wolfgang Losert, Marcus T. Cicerone, Carol A. Parent
Neutrophil recruitment to inflammation sites purportedly depends on sequential waves of chemoattractants. Current models propose that LTB4, a secondary chemoattractant secreted by neutrophils in response to primary chemoattractants such as formyl-peptides

Optimization of Imaging Polymer Based Scaffolds Using X-Ray Microcomputed Tomography

May 15, 2012
Author(s)
David E. Morris, Melissa L. Mather, Carl Simon Jr., John A. Crowe
The performance of polymer based scaffolds used in regenerative medicine is linked to their structural properties and as such strategies for structural characterization of scaffolds have been developed. X-ray microscopic computed tomography (X-ray micro CT

Frequency-selective contrast on variably doped p-type silicon with a scanning microwave microscope

May 14, 2012
Author(s)
Atif A. Imtiaz, Thomas M. Wallis, SangHyun S. Lim, H. Tanbakuchi, H-P Huber, A. Hornung, P. Hinterdorfer, J. Smoliner, F. Kienberger, Pavel Kabos
We report frequency dependent contrast in d(S11)/dV measurements of a variably doped p-type silicon sample in the frequency range from 2GHz to 18GHz. The measurements were conducted bys use of a scanning microwave microscope. The measurements were done at

Can We Get 3D CD Metrology Right?

April 19, 2012
Author(s)
Andras Vladar, John S. Villarrubia, Michael T. Postek, Petr Cizmar
Our world is three-dimensional, so are the integrated circuits (ICs), they have always been. In the past, for a long time, we’ve been very fortunate, because it was enough to measure the critical dimension (CD), the width of the resist line to keep IC

Scatterfield Microscopy of 22 nm Node Patterned Defects using Visible and DUV Light

April 4, 2012
Author(s)
Bryan M. Barnes, Martin Y. Sohn, Francois R. Goasmat, Hui Zhou, Richard M. Silver, Abraham Arceo
Smaller patterning dimensions and novel architectures are fostering research into improved methods of defect detection in semiconductor device manufacturing. This initial experimental study, augmented with simulation, evaluates scatterfield microscopy to

Dielectrophoretic Cell Capture on Polyester Membranes

April 2, 2012
Author(s)
Conni Hanke, Petra S. Dittrich, Darwin Reyes-Hernandez
A new system for dielectrophoretic cell capture on porous polyester (PET) membranes is presented. Conventional photolithographic techniques were used to fabricate gold microelectrodes on a PET membrane. We characterized these electrodes to proof that there

SEM imaging of ultra-high aspect ratio hole features

March 29, 2012
Author(s)
John S. Villarrubia, Aron Cepler, Benjamin D. Bunday, Bradley Thiel
In-line, non-destructive process control metrology of high aspect ratio (HAR) holes and trenches has long been a known gap in metrology. Imaging the bottoms of at-node size beyond 10:1 AR contact holes in oxide has not yet been demonstrated. Nevertheless

A Case Study on the Impact of Local Material Chemistry on the Mechanical Reliability of Packaged Integrated Circuits: Correlation of the Packaging Fallout to the Chemistry of Passivation Dielectrics in an Al-Cu System

March 19, 2012
Author(s)
Chukwudi A. Okoro, Yaw S. Obeng
In this paper, we use a variety of analytical techniques to examine the impact of local chemistry, and the mechanical properties, of the encapsulation dielectric films on the post-packaging device rejection rate of integrated circuit devices. A strong

Carbohydrate-Functionalized Surfactant Vesicles for Controlling Glycan Density

March 15, 2012
Author(s)
Monique A. Makos, Rebecca A. Zangmeister
We report on the development of a method for rapidly characterizing the glycan binding properties of lectins. Catanionic surfactant vesicles were prepared that spontaneously formed in water and remained stable at room temperature for months. By varying the

High Speed Endurance and Switching Measurements for Memristive Switches

March 6, 2012
Author(s)
Pragya R. Shrestha, Adaku Ochia, Kin P. Cheung, Jason P. Campbell, Helmut Baumgart, Gary Harris
Accurate capture of the Set/Reset characteristics is a necessary but challenging task for the development of memristive switches. Here we describe and demonstrate a technique capable of meeting this challenge. This technique can measure the transient

Tunnel FET Heterojunction Band Alignment by Internal Photoemission Spectroscopy

March 6, 2012
Author(s)
Qin Zhang, Guangle Zhou, Huili G. Xing, Alan C. Seabaugh, Kun Xu, Sio Hong, Oleg A. Kirillov, Curt A. Richter, Nhan Van Nguyen
The electron energy band alignment of a metal-oxide-semiconductor tunnel field-effect transistor (TFET) heterojunction, W/Al2O3/InGaAs/InAs/InP is determined by internal photoemission spectroscopy. At the oxide flat-band condition, the barrier height from

VCI Simulation with Semiconductor Device Models: Test Report

February 29, 2012
Author(s)
John S. Villarrubia
JMONSEL, an electron beam imaging simulator, has been modified to permit conducting regions of a sample to be designated as unconnected to an external source or sink of charge (floating) or, alternatively, to be connected with a user-specified relaxation

Radio Frequency and Analog/Mixed-Signal Technologies

January 20, 2012
Author(s)
Herbert S. Bennett, John J. Pekarik
This 2011 roadmap for radio frequency and analog/mixed-signal (RF and AMS) technologies presents the challenges, technology requirements, and potential solutions for the basic technology elements (transistors and passive devices). RF and AMS technologies

ITRS Chapter: RF and A/MS Technologies

January 12, 2012
Author(s)
Herbert S. Bennett, John J. Pekarik
Radio frequency and analog/mixed-signal (RF and A/MS) technologies are essential and critical technologies for the rapidly diversifying semiconductor market that comprises many more applications than the wireless and wire-line communications market that

MEMS

January 12, 2012
Author(s)
Michael Gaitan
Micro-Electro-Mechanical Systems (MEMS) are devices that are fabricated using techniques similar to those used for integrated circuits (ICs) to create micrometer-sized mechanical structures (suspended bridges, cantilevers, membranes, fluid channels, etc.)

More than Moore or More Moore: a SWOT analysis

December 28, 2011
Author(s)
Herbert S. Bennett, G. D. Hutcheson
Over the last decade, the world of semiconductors has broadened its horizon from More Moore and beyond conventional scaling to More than Moore. Some first hypothesized the end of Moore’s law and the beginning of a new era. They saw it as an OR gate while

When Does a Circuit Really Fail?

December 15, 2011
Author(s)
Jason T. Ryan, Lan Wei, Jason P. Campbell, Richard G. Southwick, Kin P. Cheung, Tony Oates, Phillip Wong, John S. Suehle
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