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Time Dependent Dielectric Breakdown in high quality SiC MOS capacitors

Published

Author(s)

Zakariae Chbili, Kin (Charles) Cheung, Jason Campbell, Jaafar Chbili, Mhamed Lahbabi, D. E. Ioannou, Kevin Matocha
Proceedings Title
Silicon Carbide and Related Materials
Volume
858
Conference Dates
October 4-9, 2015
Conference Location
Giardini Naxos, IT
Conference Title
International Conference on Silicon Carbide and Related Materials 2015

Citation

Chbili, Z. , Cheung, K. , Campbell, J. , Chbili, J. , Lahbabi, M. , Ioannou, D. and Matocha, K. (2016), Time Dependent Dielectric Breakdown in high quality SiC MOS capacitors, Silicon Carbide and Related Materials , Giardini Naxos, IT (Accessed June 13, 2024)

Issues

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Created May 23, 2016, Updated April 1, 2022