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PUBLICATIONS

Time Dependent Dielectric Breakdown in high quality SiC MOS capacitors

Published

Author(s)

Zakariae Chbili, Kin Cheung, Jason Campbell, Jaafar Chbili, Mhamed Lahbabi, D. E. Ioannou, Kevin Matocha
Proceedings Title
Silicon Carbide and Related Materials
Volume
858
Conference Dates
October 4-9, 2015
Conference Location
Giardini Naxos, IT
Conference Title
International Conference on Silicon Carbide and Related Materials 2015
Pub Type
Conferences

Download Paper

Local Download
Semiconductors, Polymers and Materials characterization

Citation

Chbili, Z. , Cheung, K. , Campbell, J. , Chbili, J. , Lahbabi, M. , Ioannou, D. and Matocha, K. (2016), Time Dependent Dielectric Breakdown in high quality SiC MOS capacitors, Silicon Carbide and Related Materials , Giardini Naxos, IT, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=918846 (Accessed October 11, 2025)

Issues

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Created May 23, 2016, Updated September 29, 2025
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