A ROUND ROBIN EXPERIMENT TO SUPPORT BOND VOID MEASUREMENT STANDARDS

Published

May 1, 2016

Author(s)

Richard A. Allen, David T. Read, Victor H. Vartanian, Winthrop A. Baylies, William Kerr, Mark Plemmons, Kevin T. Turner

Abstract

A round robin experiment to compare the sensitivities of various metrology tools to small voids between bonded wafers such as are used in three-dimensional stacked integrated circuits (3DS-ICs) and MEMS packaging. Participants received a set of four bonded wafer pairs with programmed voids from 0.5 μm to 300 μm in the bond plane; each wafer pair had different void depth ranging from 40 nm to 1200 nm. This experiment highlighted the capabilities and limits of various infrared (IR) and acoustic microscopies, including factors such as speed of measurement and resolution

Proceedings Title

Conference on Wafer Bonding for Microsystems 3S- and Wafer Level Integration

Conference Dates

December 8-9, 2015

Conference Location

Braunschweig, DE

Pub Type

Conferences

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Keywords

microelectromechanical systems (MEMS), three dimensional stacked integrated circuits (3DS-IC), 3D-IC

Citation

Allen, R. , Read, D. , Vartanian, V. , Baylies, W. , Kerr, W. , Plemmons, M. and Turner, K. (2016), A ROUND ROBIN EXPERIMENT TO SUPPORT BOND VOID MEASUREMENT STANDARDS, Conference on Wafer Bonding for Microsystems 3S- and Wafer Level Integration, Braunschweig, DE, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=919791 (Accessed October 21, 2025)