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A ROUND ROBIN EXPERIMENT TO SUPPORT BOND VOID MEASUREMENT STANDARDS

Published

Author(s)

Richard A. Allen, David T. Read, Victor H. Vartanian, Winthrop A. Baylies, William Kerr, Mark Plemmons, Kevin T. Turner

Abstract

A round robin experiment to compare the sensitivities of various metrology tools to small voids between bonded wafers such as are used in three-dimensional stacked integrated circuits (3DS-ICs) and MEMS packaging. Participants received a set of four bonded wafer pairs with programmed voids from 0.5 μm to 300 μm in the bond plane; each wafer pair had different void depth ranging from 40 nm to 1200 nm. This experiment highlighted the capabilities and limits of various infrared (IR) and acoustic microscopies, including factors such as speed of measurement and resolution
Proceedings Title
Conference on Wafer Bonding for Microsystems 3S- and Wafer Level Integration
Conference Dates
December 8-9, 2015
Conference Location
Braunschweig, DE

Keywords

microelectromechanical systems (MEMS), three dimensional stacked integrated circuits (3DS-IC), 3D-IC

Citation

Allen, R. , Read, D. , Vartanian, V. , Baylies, W. , Kerr, W. , Plemmons, M. and Turner, K. (2016), A ROUND ROBIN EXPERIMENT TO SUPPORT BOND VOID MEASUREMENT STANDARDS, Conference on Wafer Bonding for Microsystems 3S- and Wafer Level Integration, Braunschweig, DE, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=919791 (Accessed February 25, 2024)
Created May 1, 2016, Updated April 1, 2022