Microwave measurements and systematic circuit-model extraction of nanowire metal semiconductor field-effect transistors

Published

August 24, 2012

Author(s)

Dazhen Gu, Thomas M. Wallis, Pavel Kabos, Paul T. Blanchard, Kristine A. Bertness, Norman A. Sanford

Abstract

We present detailed on-wafer scattering parameter measurements and equivalent circuit modeling of metal semiconductor field effect transistor (MESFET) that incorporates a GaN nanowire (NW). A systematic procedure is established to extract intrinsic model parameters by removing extrinsic parameters of the NW under di erent bias conditions. All parameters are first determined from analytic formulas that establish their relationship to measured impedance and admittance parameters. The analytically determined parameters are then processed in a numerical fitting program and a circuit simulator for minimizing the difference between the modeled data and the experimental data. For demonstration, the proposed framework is applied to a GaN NW MESFET with 1.5 m long gate up to 10 GHz. Its transconductance is estimated to be 16.6 υS,the transit time is estimated to be 9.8 ps, and the maximum frequency of oscillation is about 16 GHz.

Citation

Journal of Applied Physics

Volume

23

Issue

10

Pub Type

Journals

Citation

Gu, D. , Wallis, T. , Kabos, P. , Blanchard, P. , Bertness, K. and Sanford, N. (2012), Microwave measurements and systematic circuit-model extraction of nanowire metal semiconductor field-effect transistors, Journal of Applied Physics (Accessed December 7, 2024)