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Search Publications by: Jason Campbell (Fed)

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Displaying 76 - 100 of 116

High Mobility Channel from the Prospective of Random Telegraph Noise

September 12, 2011
Author(s)
Kin P. Cheung, Jason P. Campbell
We experimentally verify for the first time that random telegraph noise (RTN) in ultra-scaled MOSFETs is related to the inversion charge density in the channel. We then examine the merit of high mobility channel devices from the RTN prospective. This

A Simple Series Resistance Extraction Methodology for Advanced CMOS Devices

August 1, 2011
Author(s)
Jason P. Campbell, Kin P. Cheung, John S. Suehle, A Oates
Series resistance has become a serious obstacle inhibiting the performance of advanced CMOS devices. However, series resistance quantification in these same advanced CMOS devices is becoming exceedingly difficult. In this study, we demonstrate a very

Spectroscopic charge pumping investigation of the amphoteric nature of Si/SiO2 interface states

June 6, 2011
Author(s)
Jason T. Ryan, Liangchun (. Yu, Jae Han, Joseph J. Kopanski, Kin P. Cheung, Fei Zhang, Chen Wang, Jason P. Campbell, John S. Suehle
The amphoteric nature of Si/SiO2 interface states in submicron sized metal-oxide-silicon-field-effect-transistors is observed using an enhanced spectroscopic charge pumping method. The method’s simplicity and high sensitivity makes it a powerful tool for

A Physics-Based Simple Series Resistance Extraction Methodology

June 1, 2011
Author(s)
Kin P. Cheung, Jason P. Campbell
Series resistance has become a serious obstacle encountered in the development of advanced CMOS devices. At the same time, series resistance quantification in these same advanced CMOS devices is a difficult challenge. In this study, we demonstrate a very

On The Magnitude of Random Telegraph Noise in Ultra-Scaled MOSFETs

May 2, 2011
Author(s)
Kin P. Cheung, Jason P. Campbell
Random telegraph noise (RTN) has been shown to be a more severe scaling issue than the Random Dopant Effect (RDE). However this observation relies heavily on studies which focus only on threshold voltage (VTH) fluctuations. VTH measurements make separation

A new interface defect spectroscopy method

April 26, 2011
Author(s)
Jason T. Ryan, Liangchun (. Yu, Jae Han, Joseph J. Kopanski, Kin P. Cheung, Fei Zhang, Chen Wang, Jason P. Campbell, John S. Suehle, Vinny Tilak, Jody Fronheiser

A new interface defect spectroscopy method

April 13, 2011
Author(s)
Jason T. Ryan, Liangchun (. Yu, Jae Han, Joseph J. Kopanski, Kin P. Cheung, Jason P. Campbell, Fei Zhang, Chen Wang, John S. Suehle, Vinny Tilak, Jody Fronheiser

A New Interface Defect Spectroscopy Method

April 12, 2011
Author(s)
Jason T. Ryan, Liangchun (. Yu, Jae Han, Joseph J. Kopanski, Kin P. Cheung, Fei Zhang, C Wang, Jason P. Campbell, John S. Suehle, Vinayak Tilak, Jody Fronheiser
A new interface defect spectroscopy method based on variable height charge pumping capable of observing the amphoteric nature of Si/SiO2 interface states in production quality sub-micron devices is demonstrated. It can help to resolve the long standing

A New Interface Defect Spectroscopy Method

April 11, 2011
Author(s)
Jason T. Ryan, Liangchun (. Yu, Jae Han, Joseph J. Kopanski, Kin P. Cheung, Fei Zhang, Chen Wang, Jason P. Campbell, John S. Suehle, Viniyak Tilak, Jody Fronheiser
A new interface defect spectroscopy method based on variable height charge pumping capable of observing the amphoteric nature of Si/SiO2 interface states in production quality sub-micron devices is demonstrated. It can help to resolve the long standing

Geometric Magnetoresistance Mobility Extraction in Highly Scaled Transistors

January 3, 2011
Author(s)
Jason P. Campbell, Kin P. Cheung, Liangchun (. Yu, John S. Suehle, Kuang Sheng, A Oates
Geometric magnetoresistance provides a promising solution to the difficult challenges associated with channel mobility extraction in nano-scale transistors. However, this technique requires significant experimental considerations which are uncommon in most

The Role of High-Field Stress in the Negative Bias Temperature Instability

December 1, 2010
Author(s)
Jason P. Campbell, Kin P. Cheung, John S. Suehle, A Oates
In this study, a fast drain current measurement methodology which supports the standard threshold voltage and transconductance extractions associated with the fast dynamic negative-bias temperature instability (NBTI) is presented. Using this methodology

Gate Dielectrics Year-In-Review

May 3, 2010
Author(s)
Jason P. Campbell
The gate dielectrics year-in-review includes a comprehensive examination of the past year s reports which detail gate stack reliability issues and the corresponding physical mechanisms which limit the performance and lifetimes of advanced devices. The

NBTI: Confusion, Frustration, and Promise?

May 2, 2010
Author(s)
Jason P. Campbell
The negative-bias temperature instability (NBTI) is a reliability problem that, in the last ten years, has risen from relative obscurity to become the most important reliability problem in advanced pMOSFET devices. Even though a significant effort has been

Frequency-Dependent Charge-Pumping: The Depth Question Revisited

May 1, 2010
Author(s)
Fan Zhang, Kin P. Cheung, Jason Campbell, John S. Suehle
A popular defect depth-profiling technique, frequency-dependent charge-pumping is carefully re-examined. Without complicated math of modeling, the physics behind the technique is examined clearly. It is shown that there is no unique relationship between

A Fast, Simple Wafer-level Hall-Mobility Measurement Technique

October 21, 2009
Author(s)
Liangchun (. Yu, Kin P. Cheung, Vinayak Tilak, Greg Dunne, Kevin Matocha, Jason P. Campbell, Kuang Sheng
Mobility is a good indicator of device reliability. High channel mobility is one of the biggest challenges especially in novel devices such as high-k based MOSFET, III-V devices and SiC power MOSFET etc. Accurate measurement of channel mobility is required

An Improved Fast I d -V ^d g Measurement Technology With Expanded Application Range

October 19, 2009
Author(s)
Chen Wang, Liangchun (. Yu, Jason P. Campbell, Kin P. Cheung, Yi Xuan, Peide Ye, John S. Suehle, David Zhang
Fast Id-Vg measurements on very high performance devices (very low channel ON-resistance) and larger area devices (therefore large gate capacitance) are subject to serious distortions. Methods to minimize these distortions are introduced in this paper