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New Methods for the Direct Extraction of Mobility and Series Resistance from a Single Ultra-Scaled Device

Published

Author(s)

Jason P. Campbell, Kin P. Cheung, Liangchun (. Yu, John S. Suehle, Kuang Sheng, A Oates

Abstract

A reliable extraction methodology for both quantities directly from a single ultra-scaled device is extremely important and urgently needed. In this work, we demonstrate (1) a wafer level geometric magnetoresistance methodology for mobility extraction which is free from the influence of series resistance and (2) an elegantly simple series resistance extraction methodology with verifiable accuracy. Both methodologies are applicable to ultra-scaled silicon nMOSFETs and require only a single device.
Proceedings Title
2010 IEEE VLSI Symposium on Technology
Conference Dates
June 14-17, 2010
Conference Location
Honolulu, HI

Citation

Campbell, J. , Cheung, K. , Yu, L. , Suehle, J. , Sheng, K. and Oates, A. (2010), New Methods for the Direct Extraction of Mobility and Series Resistance from a Single Ultra-Scaled Device, 2010 IEEE VLSI Symposium on Technology, Honolulu, HI (Accessed July 16, 2024)

Issues

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Created June 1, 2010, Updated February 19, 2017