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Electrically Detected Magnetic Resonance in Dielectric Semiconductor Systems of Current Interest

Published

Author(s)

Patrick M. Lenahan, Corey Cochrane, Jason Campbell, Jason Ryan

Abstract

Several electrically detected magnetic resonance techniques provide insight into the physical and chemical structure of technologically significant deep level defects in solid state electronics. Spin dependent recombination is sensitive to deep level defects within semiconductors or at semiconductor dielectric interfaces. Spin dependent trap assisted tunneling can identify defects in dielectric films and, under some circumstances, can provide fairly precise information relating energy levels to physical/structural information about the defects under observation.
Citation
Electrochemical Society Transactions
Volume
35
Issue
4

Citation

Lenahan, P. , Cochrane, C. , Campbell, J. and Ryan, J. (2011), Electrically Detected Magnetic Resonance in Dielectric Semiconductor Systems of Current Interest, Electrochemical Society Transactions, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=909230 (Accessed April 17, 2024)
Created April 30, 2011, Updated October 12, 2021