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High Mobility Channel from the Prospective of Random Telegraph Noise

Published

Author(s)

Kin P. Cheung, Jason P. Campbell

Abstract

We experimentally verify for the first time that random telegraph noise (RTN) in ultra-scaled MOSFETs is related to the inversion charge density in the channel. We then examine the merit of high mobility channel devices from the RTN prospective. This analysis strongly suggests that RTN is a serious obstacle for high mobility channel adoption.
Proceedings Title
41st European Solid-State Device Research Conference (ESSDERC)
Conference Dates
September 12-16, 2011
Conference Location
Helsinki

Keywords

random telegraph noise, MOSFET, high mobility, scaling

Citation

Cheung, K. and Campbell, J. (2011), High Mobility Channel from the Prospective of Random Telegraph Noise, 41st European Solid-State Device Research Conference (ESSDERC), Helsinki, -1, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=908755 (Accessed May 22, 2024)

Issues

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Created September 12, 2011, Updated February 19, 2017