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Spectroscopic charge pumping investigation of the amphoteric nature of Si/SiO2 interface states

Published

Author(s)

Jason T. Ryan, Liangchun (. Yu, Jae Han, Joseph J. Kopanski, Kin P. Cheung, Fei Zhang, Chen Wang, Jason P. Campbell, John S. Suehle

Abstract

The amphoteric nature of Si/SiO2 interface states in submicron sized metal-oxide-silicon-field-effect-transistors is observed using an enhanced spectroscopic charge pumping method. The method’s simplicity and high sensitivity makes it a powerful tool for interrogating the true nature of electrically measured interface states in samples which exhibit extremely low defect densities. The spectroscopic results obtained clearly illustrate a signature “double peak” density of states consistent with amphoteric Pb center data obtained from electron spin resonance measurements. Since the method is a hybrid of the commonly used charge pumping methodology, it should find widespread use in electronic device characterization.
Citation
Applied Physics Letters
Volume
98

Citation

Ryan, J. , Yu, L. , Han, J. , Kopanski, J. , Cheung, K. , Zhang, F. , Wang, C. , Campbell, J. and Suehle, J. (2011), Spectroscopic charge pumping investigation of the amphoteric nature of Si/SiO2 interface states, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=908429 (Accessed October 21, 2021)
Created June 6, 2011, Updated February 19, 2017