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A New Interface Defect Spectroscopy Method

Published

Author(s)

Jason T. Ryan, Liangchun (. Yu, Jae Han, Joseph J. Kopanski, Kin P. Cheung, Fei Zhang, Chen Wang, Jason P. Campbell, John S. Suehle, Viniyak Tilak, Jody Fronheiser

Abstract

A new interface defect spectroscopy method based on variable height charge pumping capable of observing the amphoteric nature of Si/SiO2 interface states in production quality sub-micron devices is demonstrated. It can help to resolve the long standing debate about the true nature of interface states.
Proceedings Title
International Symposium on VLSI Technology, Systems and Applications
Conference Dates
April 25-27, 2011
Conference Location
Hsinchu

Keywords

interface states, Pb centers, charge pumping

Citation

Ryan, J. , Yu, L. , Han, J. , Kopanski, J. , Cheung, K. , Zhang, F. , Wang, C. , Campbell, J. , Suehle, J. , Tilak, V. and Fronheiser, J. (2011), A New Interface Defect Spectroscopy Method, International Symposium on VLSI Technology, Systems and Applications, Hsinchu, -1 (Accessed May 24, 2024)

Issues

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Created April 11, 2011, Updated February 19, 2017