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A Fast, Simple Wafer-level Hall-Mobility Measurement Technique

Published

Author(s)

Liangchun (. Yu, Kin P. Cheung, Vinayak Tilak, Greg Dunne, Kevin Matocha, Jason P. Campbell, Kuang Sheng

Abstract

Mobility is a good indicator of device reliability. High channel mobility is one of the biggest challenges especially in novel devices such as high-k based MOSFET, III-V devices and SiC power MOSFET etc. Accurate measurement of channel mobility is required for studying the limiting mechanism of mobility. Hall mobility is more favorable than effective mobility or field effect mobility because it takes into account only the mobile charges, which is essential for measuring novel devices that have a very high trap density. However, regular Hall measurement involves a bulky system and tedious sample preparation, which inhibit frequent use. In this paper, we demonstrate a fast and easy to implement wafer-level Hallmobility measurement technique that allows for large survey of many devices under various conditions.

Keywords

Hall-mobility, Wafer-level, MOS, SiC

Citation

Yu, L. , Cheung, K. , Tilak, V. , Dunne, G. , Matocha, K. , Campbell, J. and Sheng, K. (2009), A Fast, Simple Wafer-level Hall-Mobility Measurement Technique, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=905424 (Accessed April 20, 2024)
Created October 21, 2009, Updated February 19, 2017