Yu, L.
, Cheung, K.
, Tilak, V.
, Dunne, G.
, Matocha, K.
, Campbell, J.
and Sheng, K.
(2009),
A Fast, Simple Wafer-level Hall-Mobility Measurement Technique, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=905424
(Accessed October 25, 2025)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
A Fast, Simple Wafer-level Hall-Mobility Measurement Technique
Published
Author(s)
, , Vinayak Tilak, Greg Dunne, Kevin Matocha, , Kuang Sheng
Abstract
Mobility is a good indicator of device reliability. High channel mobility is one of the biggest challenges especially in novel devices such as high-k based MOSFET, III-V devices and SiC power MOSFET etc. Accurate measurement of channel mobility is required for studying the limiting mechanism of mobility. Hall mobility is more favorable than effective mobility or field effect mobility because it takes into account only the mobile charges, which is essential for measuring novel devices that have a very high trap density. However, regular Hall measurement involves a bulky system and tedious sample preparation, which inhibit frequent use. In this paper, we demonstrate a fast and easy to implement wafer-level Hallmobility measurement technique that allows for large survey of many devices under various conditions.Pub Type
Talks
Download Paper
Keywords
Hall-mobility, Wafer-level, MOS, SiC
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact [email protected].
Created October 21, 2009, Updated February 19, 2017