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PUBLICATIONS

An Improved Fast I d -V ^d g Measurement Technology With Expanded Application Range

Published

Author(s)

Chen Wang, Liangchun (. Yu, Jason P. Campbell, Kin P. Cheung, Yi Xuan, Peide Ye, John S. Suehle, David Zhang

Abstract

Fast Id-Vg measurements on very high performance devices (very low channel ON-resistance) and larger area devices (therefore large gate capacitance) are subject to serious distortions. Methods to minimize these distortions are introduced in this paper; thus expanding the applicable range of this important measurement technique.
Proceedings Title
2009 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP
Conference Dates
October 19-23, 2009
Conference Location
Reno, NV
Pub Type
Conferences

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Keywords

Fast Id-Vg, transient charge trapping, displacement current, power droop
Polymers

Citation

Wang, C. , Yu, L. , Campbell, J. , Cheung, K. , Xuan, Y. , Ye, P. , Suehle, J. and Zhang, D. (2009), An Improved Fast I<sub> d </sub>-V ^d g Measurement Technology With Expanded Application Range, 2009 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP , Reno, NV, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=904155 (Accessed October 11, 2024)

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Created October 19, 2009, Updated February 19, 2017