Wafer-Level Magnetotransport Measurement of Advanced Transistors Making a Powerful Technique Even More Powerful
Kin P. Cheung, Jason P. Campbell, Liangchun (. Yu
For transistor research and development, one of the important figures of merit is the carrier mobility. The measurement of mobility is cumbersome in large devices, and nearly impossible in nano scale devices. Very often, effective mobility is extracted from the I-V curve instead. There are many pitfalls in equating that to mobility, including charge-trapping and series resistance effects. The error can be quite large. This is a urgent issue for advanced CMOS technology. In this paper, two novel advances in mobility measurement introduced by our group recently are presented. Both are Hall Effect based and are well known. Our innovations enable both techniques to be deployed easily in any laboratory as well as factory floor.
November 1-4, 2010
10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)
Carrier mobility, MOSFET, magnetoresistance, Hall effect
, Campbell, J.
and Yu, L.
Wafer-Level Magnetotransport Measurement of Advanced Transistors – Making a Powerful Technique Even More Powerful, 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Shanghai,
(Accessed February 27, 2024)