Campbell, J.
(2010),
Gate Dielectrics Year-In-Review
(Accessed October 8, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Gate Dielectrics Year-In-Review
Published
Author(s)
Abstract
The gate dielectrics year-in-review includes a comprehensive examination of the past year s reports which detail gate stack reliability issues and the corresponding physical mechanisms which limit the performance and lifetimes of advanced devices. The intent of this presentation is to critically examine and publicize the most important advancements in understanding and mitigating various instabilities (BTI, TDDB, Noise, etc ) in a variety of technologically relevant (oxide, oxynitride, and high-k) gate stacks. In addition, this review includes a short discussion regarding reliability issues involved with the adoption of alternative channel materials and the instabilities associated with resistive/phase-change memories.Pub Type
Talks
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created May 3, 2010, Updated February 19, 2017