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Gate Dielectrics Year-In-Review

Published

Author(s)

Jason P. Campbell

Abstract

The gate dielectrics year-in-review includes a comprehensive examination of the past year s reports which detail gate stack reliability issues and the corresponding physical mechanisms which limit the performance and lifetimes of advanced devices. The intent of this presentation is to critically examine and publicize the most important advancements in understanding and mitigating various instabilities (BTI, TDDB, Noise, etc ) in a variety of technologically relevant (oxide, oxynitride, and high-k) gate stacks. In addition, this review includes a short discussion regarding reliability issues involved with the adoption of alternative channel materials and the instabilities associated with resistive/phase-change memories.

Citation

Campbell, J. (2010), Gate Dielectrics Year-In-Review (Accessed April 14, 2024)
Created May 3, 2010, Updated February 19, 2017