On The Magnitude of Random Telegraph Noise in Ultra-Scaled MOSFETs

Published

May 2, 2011

Author(s)

Kin P. Cheung, Jason P. Campbell

Abstract

Random telegraph noise (RTN) has been shown to be a more severe scaling issue than the Random Dopant Effect (RDE). However this observation relies heavily on studies which focus only on threshold voltage (VTH) fluctuations. VTH measurements make separation of these two scaling issues (RTN and RDE) difficult. Since future scaled devices may use channels with no or low doping, it is important to examine the impact of RTN without the influence of RDE. In this work, we experimentally verify the “hole in the inversion layer” model of RTN and then use it to examine the magnitude of RTN in ultra-scaled devices without the influence of RDE. This analysis strongly suggests that RTN is a serious issue even in the absence of RDE.

Proceedings Title

2011 International Conference on Integrated Circuit Design & Technology

Conference Dates

May 2-5, 2011

Conference Location

Kaohsung

Pub Type

Conferences

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Keywords

random telegraph noise, mosfet, scaling

Citation

Cheung, K. and Campbell, J. (2011), On The Magnitude of Random Telegraph Noise in Ultra-Scaled MOSFETs, 2011 International Conference on Integrated Circuit Design & Technology, Kaohsung, -1, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=908458 (Accessed October 2, 2025)