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PUBLICATIONS

Frequency-Dependent Charge-Pumping: The Depth Question Revisited

Published

Author(s)

Fan Zhang, Kin P. Cheung, Jason Campbell, John S. Suehle

Abstract

A popular defect depth-profiling technique, frequency-dependent charge-pumping is carefully re-examined. Without complicated math of modeling, the physics behind the technique is examined clearly. It is shown that there is no unique relationship between the measurement frequency and the probed depth. The conclusion is that frequency-dependent charge-pumping is not a defect depth-profiling technique.
Proceedings Title
IEEE International Reliability Physics Symposium Proceedings
Conference Dates
May 2-6, 2010
Conference Location
Anaheim, CA, US
Pub Type
Conferences

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Keywords

frequency-dependent, charge-pumping, defect, depth profiling
Electron physics

Citation

Zhang, F. , Cheung, K. , Campbell, J. and Suehle, J. (2010), Frequency-Dependent Charge-Pumping: The Depth Question Revisited, IEEE International Reliability Physics Symposium Proceedings, Anaheim, CA, US, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=904997 (Accessed April 18, 2024)

Created April 30, 2010, Updated October 12, 2021