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Geometric Magnetoresistance Mobility Extraction in Highly Scaled Transistors

Published

Author(s)

Jason P. Campbell, Kin P. Cheung, Liangchun (. Yu, John S. Suehle, Kuang Sheng, A Oates

Abstract

Geometric magnetoresistance provides a promising solution to the difficult challenges associated with channel mobility extraction in nano-scale transistors. However, this technique requires significant experimental considerations which are uncommon in most laboratories. In addition, removing the influence of series resistance on the extracted mobility introduces further difficulty. In this study we present a new geometric magnetoresistance measurement methodology that not only greatly simplifies the experimental requirements, but also yields mobility values which are free from series resistance effects.
Citation
IEEE Electron Device Letters
Volume
32
Issue
1

Citation

Campbell, J. , Cheung, K. , Yu, L. , Suehle, J. , Sheng, K. and Oates, A. (2011), Geometric Magnetoresistance Mobility Extraction in Highly Scaled Transistors, IEEE Electron Device Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=905955 (Accessed June 19, 2024)

Issues

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Created January 3, 2011, Updated February 19, 2017