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A New Interface Defect Spectroscopy Method

Published

Author(s)

Jason T. Ryan, Liangchun (. Yu, Jae Han, Joseph J. Kopanski, Kin P. Cheung, Fei Zhang, C Wang, Jason P. Campbell, John S. Suehle, Vinayak Tilak, Jody Fronheiser

Abstract

A new interface defect spectroscopy method based on variable height charge pumping capable of observing the amphoteric nature of Si/SiO2 interface states in production quality sub-micron devices is demonstrated. It can help to resolve the long standing debate about the true nature of Si/SiO2 interface states. Additionally, we show that this is a powerful technique for studying other important material systems.
Proceedings Title
Proceedings of the IEEE International Reliability Physics Symposium
Conference Dates
April 10-14, 2011
Conference Location
Monterey, CA
Conference Title
IEEE International Reliability Physics Symposium

Keywords

interface states, Pb centers, charge pumping

Citation

Ryan, J. , Yu, L. , Han, J. , Kopanski, J. , Cheung, K. , Zhang, F. , Wang, C. , Campbell, J. , Suehle, J. , Tilak, V. and Fronheiser, J. (2011), A New Interface Defect Spectroscopy Method, Proceedings of the IEEE International Reliability Physics Symposium, Monterey, CA (Accessed March 3, 2024)
Created April 12, 2011, Updated February 19, 2017