Ryan, J.
, Yu, L.
, Han, J.
, Kopanski, J.
, Cheung, K.
, Zhang, F.
, Wang, C.
, Campbell, J.
, Suehle, J.
, Tilak, V.
and Fronheiser, J.
(2011),
A New Interface Defect Spectroscopy Method, Proceedings of the IEEE International Reliability Physics Symposium, Monterey, CA
(Accessed October 10, 2025)
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A New Interface Defect Spectroscopy Method
Published
Author(s)
, , , , , Fei Zhang, C Wang, , , Vinayak Tilak, Jody Fronheiser
Abstract
A new interface defect spectroscopy method based on variable height charge pumping capable of observing the amphoteric nature of Si/SiO2 interface states in production quality sub-micron devices is demonstrated. It can help to resolve the long standing debate about the true nature of Si/SiO2 interface states. Additionally, we show that this is a powerful technique for studying other important material systems.Proceedings Title
Proceedings of the IEEE International Reliability Physics Symposium
Conference Dates
April 10-14, 2011
Conference Location
Monterey, CA
Conference Title
IEEE International Reliability Physics Symposium
Pub Type
Conferences
Keywords
interface states, Pb centers, charge pumping
Citation
Issues
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Created April 12, 2011, Updated February 19, 2017