Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

New Methods for the Direct Extraction of Mobility and Series Resistance from a Single Ultra-Scaled Device

Published

Author(s)

Jason P. Campbell, Kin P. Cheung, Liangchun (. Yu, John S. Suehle, Kuang Sheng, A Oates

Abstract

The engineering of channel mobility (μ) and series resistance (RSD) in advanced CMOS technologies are both extremely challenging and of paramount importance. Together, they determine the key metric of performance ON current. The reported scaling trends suggest that these two quantities will remain a primary concern in advanced CMOS technology development. Reliable extraction methodology for both quantities directly from a single ultra-scaled device is therefore extremely important and urgently needed. In this work we demonstrate (1) a wafer level geometric magnetoresistance methodology for μ extraction that is free from the influence of series resistance and (2) an elegantly simple RSD extraction methodology with verifiable accuracy. Both methodologies are applicable to ultra-scaled silicon nMOSFETs and require only a single device.

Keywords

magnetoresistance mobility, series resistance

Citation

Campbell, J. , Cheung, K. , Yu, L. , Suehle, J. , Sheng, K. and Oates, A. (2010), New Methods for the Direct Extraction of Mobility and Series Resistance from a Single Ultra-Scaled Device, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=907097 (Accessed April 21, 2024)
Created June 15, 2010, Updated February 19, 2017