U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Search Publications by: Jason Campbell (Fed)

Search Title, Abstract, Conference, Citation, Keyword or Author
Displaying 51 - 75 of 116

Circuit Speed Timing Jitter Increase in Random Logic Operation after NBTI Stress

June 1, 2014
Author(s)
Guangfan Jiao, Jiwu Lu, Jason Campbell, Jason Ryan, Kin P. Cheung, Chadwin D. Young, Gennadi Bersuker
Recently, much effort has been spent trying to relate NBTI observations to real circuit impacts. While many of these efforts rely on circuit simulation to bridge this gap, an experimental approach is, of course, preferred. In this study we provide this

Accurate RRAM Transient Currents during Forming

April 30, 2014
Author(s)
Pragya R. Shrestha, David M. Nminibapiel, Jason P. Campbell, Jihong Kim, Canute I. Vaz, Kin P. Cheung, Helmut Baumgart
Current overshoot during forming has been shown to be a serious issue. Recently the current overshoot duration has been shown to be an important factor impacting device performance. Short duration overshoot in the range of ns yield better performance. But

Constant Shape Factor Frequency Modulated Charge Pumping (FMCP)

March 3, 2014
Author(s)
Jason T. Ryan, Jason P. Campbell, Jibin Zou, Kin P. Cheung, Richard Southwick, Anthony Oates, Rue Huang
Abstract— We examine the seemingly frequency-dependent gate leakage current component of frequency-modulated charge pumping and show it to be a measurement artifact. If untreated, this results in erroneous defect density extractions. We present a constant

Dependence of the Filament Resistance on the Duration of Current Overshoot

March 3, 2014
Author(s)
Pragya R. Shrestha, David M. Nminibapiel, Jason P. Campbell, Kin P. Cheung, Helmut Baumgart, Shweta Deora, G. Bersuker
The characteristics of a conductive filament in HfO2 RRAM is shown to be dependent on the duration of the current compliance overshoot, which may occur during the filament formation process. In addition to the overshoot amplitude, the filament resistance

Fast-Capacitance for Advanced Device Characterization

March 3, 2014
Author(s)
Pragya R. Shrestha, Kin P. Cheung, Jason T. Ryan, Jason P. Campbell, Helmut Baumgart
Fast-CV measurements are frequently being used to study transient phenomena associated with advanced devices. In this study, we show that many artifacts plague this measurement and then provide a proper method to legitimize fast-CV measurements as

Unusual Bias Temperature Instability in SiC DMOSFET

March 3, 2014
Author(s)
Zakariae Chbili, Kin P. Cheung, Jason P. Campbell, John S. Suehle, D. E. Ioannou, Aivars Lelis, Sei-Hyung Ryu
We observe an unusual instability in the SiC DMOSFET transistor characteristics. From a series of bias conditions at elevated temperatures, we conclude that a high density of hole traps in the oxide near the SiO2/SiC interface are responsible.

Atomic Scale Defects Associated with the Negative Bias Temperature Instability

January 1, 2014
Author(s)
Jason P. Campbell, P. M. Lenahan
We utilize magnetic resonance measurements to identify the fundamental atomic-scale defect structures involved in the negative bias temperature instability. In gate stacks composed of pure silicon dioxide, we find a degradation mechanism directly involving

Unexpected effect of thermal storage observed on SiC power DMOSFET

September 29, 2013
Author(s)
Zakariae Chbili, Pragya R. Shrestha, Jason P. Campbell, John S. Suehle, Kin P. Cheung, D. E. Ioannou
In this paper we report an unexpected improvement in the SiC DMOSFET transistor characteristics after a long temperature treatment at 150 C. The evolution of the device characteristics during a TDDB stress is compared to that after an elevated temperature

Reliability Monitoring For Highly Leaky Devices

May 31, 2013
Author(s)
Jason T. Ryan, Jason P. Campbell, Kin P. Cheung, John S. Suehle, Richard Southwick, Anthony Oates
We demonstrate a new charge pumping (CP) methodology, frequency modulated CP (FMCP), that robustly treats metrology challenges associated with high gate leakage current. By moving to an AC coupled measurement, we are able to easily resolve small CP signals

Frequency-Modulated Charge Pumping: Defect Measurements with High Gate Leakage

February 28, 2013
Author(s)
Jason T. Ryan, Richard G. Southwick, Jason P. Campbell, Kin P. Cheung, John S. Suehle, Anthony Oates
Charge pumping is one of the most relied upon techniques used to quantify interface defects in metal-oxide-semiconductor devices. However, conventional charge pumping is easily hindered by excessive gate leakage currents which render the technique

Frequency Dependent Charge Pumping -- A Defect Depth Profiling Tool?

January 31, 2013
Author(s)
Jason T. Ryan, Richard G. Southwick, Jason P. Campbell, Kin P. Cheung, John S. Suehle
We investigate the validity of using frequency-dependent charge pumping (FD-CP) to determine bulk defect depth distributions. Using simple physical arguments we conclude that: (1) the effective tunneling length to a bulk defect can be very different than

SERIES RESISTANCE: A MONITOR FOR HOT CARRIER STRESS

January 31, 2013
Author(s)
Jason P. Campbell, Serghei Drozdov, Kin P. Cheung, Richard G. Southwick, Jason T. Ryan, John S. Suehle, Anthony Oates
In this work, we examine a series resistance extraction technique which yields accurate values from single nano-scale devices. The series resistance values, derived from this extraction technique, are shown to be sensitive to hot carrier degradation and

Current Compliance Circuit to Improve Variation in ON State Characteristics and to Minimize RESET Current

October 7, 2012
Author(s)
Pragya R. Shrestha, Adaku Ochia, Jason P. Campbell, Canute I. Vaz, Jihong Kim, Kin P. Cheung, Helmut Baumgart, Gary Harris
The wide distribution of ON and OFF values and high SET current in resistive memory is attributed to the high current overshoot during the SET process. In this paper we show a circuit which is capable of precisely limiting the current during SET process

On the Contribution of Bulk Defects on Charge Pumping Current

October 1, 2012
Author(s)
Jason T. Ryan, Richard G. Southwick, Jason P. Campbell, Kin P. Cheung, John S. Suehle
Frequency dependent charge pumping (FD-CP) has emerged as a popular technique for studying the spatial and energetic distribution of defect centers in advanced high-k gate stacks. However, conflicting interpretations of the charge pumping frequency -

Physical Model for Random Telegraph Noise Amplitudes and Implications

June 12, 2012
Author(s)
Richard G. Southwick, Kin P. Cheung, Jason P. Campbell, Serghei Drozdov, Jason T. Ryan, John S. Suehle, Anthony Oates
Random Telegraph Noise (RTN) has been shown to surpass random dopant fluctuations as a cause for decananometer device variability, through the measurement of a large number of ultra-scaled devices [1]. The most worrisome aspect of RTN is the tail of the

Channel Length-Dependent Series Resistance?

June 10, 2012
Author(s)
Jason P. Campbell, Kin P. Cheung, Serghei Drozdov, Richard G. Southwick, Jason T. Ryan, Tony Oates, John S. Suehle
A recently developed series resistance (RSD) extraction procedure from a single nanoscale device is shown to be highly robust. Despite these virtues, the technique unexpectedly results in a channel length-dependent RSD which is observed across a wide range

High Speed Endurance and Switching Measurements for Memristive Switches

March 6, 2012
Author(s)
Pragya R. Shrestha, Adaku Ochia, Kin P. Cheung, Jason P. Campbell, Helmut Baumgart, Gary Harris
Accurate capture of the Set/Reset characteristics is a necessary but challenging task for the development of memristive switches. Here we describe and demonstrate a technique capable of meeting this challenge. This technique can measure the transient

Experimentally Based Methodology for Charge Pumping Bulk Defect Trapping Correction

December 15, 2011
Author(s)
Jason T. Ryan, Richard G. Southwick, Jason P. Campbell, Kin P. Cheung, Chadwin Young, John S. Suehle
We develop a simple experimental approach to remove bulk trap contributions from charge pumping data collected on devices which suffer from large amounts of bulk dielectric electron trapping. The approach is more desirable and easier to implement than

When Does a Circuit Really Fail?

December 15, 2011
Author(s)
Jason T. Ryan, Lan Wei, Jason P. Campbell, Richard G. Southwick, Kin P. Cheung, Tony Oates, Phillip Wong, John S. Suehle

High Speed Switching Characteristics of Pt/Ta2O5/Cu Memristive Switch

October 8, 2011
Author(s)
Pragya R. Shrestha, Adaku Ochia, Kin P. Cheung, Jason P. Campbell, Helmut Baumgart, Gary Harris
Accurate measurements of the transient details of switching a memristive switch are crucial to the elucidation of the switching mechanism. Such high-speed measurements are often plagued by artifacts. Here we describe a measurement technique capable of

Circuit-Aware Device Reliability Criteria Methodology

September 12, 2011
Author(s)
Jason T. Ryan, Lan Wei, Jason P. Campbell, Richard G. Southwick, Kin P. Cheung, Anthony Oates, John S. Suehle, Phillip Wong
Meeting reliability requirements is an increasingly more difficult challenge with each generation of CMOS technology. The disconnection between conventional one-size-fits-all reliability specifications and the wide range of circuit applications might be a