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Dependence of the Filament Resistance on the Duration of Current Overshoot

Published

Author(s)

Pragya R. Shrestha, David M. Nminibapiel, Jason P. Campbell, Kin P. Cheung, Helmut Baumgart, Shweta Deora, G. Bersuker

Abstract

The characteristics of a conductive filament in HfO2 RRAM is shown to be dependent on the duration of the current compliance overshoot, which may occur during the filament formation process. In addition to the overshoot amplitude, the filament resistance is found to be affected by the duration of the overshoot caused by the parasitic capacitance.
Proceedings Title
2013 IEEE International Integrated Reliability Workshop Final Report
Conference Dates
October 13-17, 2013
Conference Location
South Lake Tahoe, CA
Conference Title
2013 IEEE International Integrated Reliability Workshop

Keywords

RRAM, RESET current, current overshoot

Citation

Shrestha, P. , Nminibapiel, D. , Campbell, J. , Cheung, K. , Baumgart, H. , Deora, S. and Bersuker, G. (2014), Dependence of the Filament Resistance on the Duration of Current Overshoot, 2013 IEEE International Integrated Reliability Workshop Final Report, South Lake Tahoe, CA (Accessed June 19, 2024)

Issues

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Created March 3, 2014, Updated February 19, 2017