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High Speed Endurance and Switching Measurements for Memristive Switches



Pragya R. Shrestha, Adaku Ochia, Kin P. Cheung, Jason P. Campbell, Helmut Baumgart, Gary Harris


Accurate capture of the Set/Reset characteristics is a necessary but challenging task for the development of memristive switches. Here we describe and demonstrate a technique capable of meeting this challenge. This technique can measure the transient current during the Set/Reset operation with a rise time of 4 ns and simultaneously measure the OFF state resistance (Roff) to 1.6 GΩ and the ON state resistance (Ron) to less than 10 . It can also rapidly cycle through the sense states to study endurance. Solid electrolyte Pt/Ta2O5/Cu memristive switches (Ron/Roff ratio of >104) are used to highlight this new measurement capability.
Electrochemical and Solid State Letters


Shrestha, P. , Ochia, A. , Cheung, K. , Campbell, J. , Baumgart, H. and Harris, G. (2012), High Speed Endurance and Switching Measurements for Memristive Switches, Electrochemical and Solid State Letters, [online], (Accessed April 17, 2024)
Created March 6, 2012, Updated November 10, 2018