Shrestha, P.
, Ochia, A.
, Cheung, K.
, Campbell, J.
, Baumgart, H.
and Harris, G.
(2012),
High Speed Endurance and Switching Measurements for Memristive Switches, Electrochemical and Solid State Letters, [online], https://doi.org/10.1149/2.002206esl
(Accessed September 8, 2024)
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High Speed Endurance and Switching Measurements for Memristive Switches
Published
Author(s)
, , , , Helmut Baumgart, Gary Harris
Abstract
Accurate capture of the Set/Reset characteristics is a necessary but challenging task for the development of memristive switches. Here we describe and demonstrate a technique capable of meeting this challenge. This technique can measure the transient current during the Set/Reset operation with a rise time of 4 ns and simultaneously measure the OFF state resistance (Roff) to 1.6 GΩ and the ON state resistance (Ron) to less than 10 . It can also rapidly cycle through the sense states to study endurance. Solid electrolyte Pt/Ta2O5/Cu memristive switches (Ron/Roff ratio of >104) are used to highlight this new measurement capability.Citation
Electrochemical and Solid State Letters
Volume
15
Issue
5
Pub Type
Journals
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Created March 6, 2012, Updated November 10, 2018