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Physical Model for Random Telegraph Noise Amplitudes and Implications

Published

Author(s)

Richard G. Southwick, Kin P. Cheung, Jason P. Campbell, Serghei Drozdov, Jason T. Ryan, John S. Suehle, Anthony Oates

Abstract

Random Telegraph Noise (RTN) has been shown to surpass random dopant fluctuations as a cause for decananometer device variability, through the measurement of a large number of ultra-scaled devices [1]. The most worrisome aspect of RTN is the tail of the amplitude distribution – the limiting cases that are rare but nevertheless wreak havoc on circuit yield and reliability. Since one cannot realistically measure enough devices to imitate a large circuit, a physics-based quantitative model is urgently needed to replace the brute force approach. Recently we introduced a physical model for RTN [2-3] but it contains a serious error. In this paper, we developed and experimentally verified a new model that provides a physical understanding of RTN amplitude. By providing a quantitative link to device parameters, it points the way to control RTN in decananometer devices.
Conference Dates
June 10-12, 2012
Conference Location
Honolulu, HI
Conference Title
Silicon Nanoelectronics Workshop

Keywords

Random telegraph noise, flicker noise, 1/f noise, MOSFET

Citation

Southwick, R. , Cheung, K. , Campbell, J. , Drozdov, S. , Ryan, J. , Suehle, J. and Oates, A. (2012), Physical Model for Random Telegraph Noise Amplitudes and Implications, Silicon Nanoelectronics Workshop, Honolulu, HI (Accessed August 14, 2022)
Created June 12, 2012, Updated February 19, 2017