Accurate RRAM Transient Currents during Forming

Published

April 30, 2014

Author(s)

Pragya R. Shrestha, David M. Nminibapiel, Jason P. Campbell, Jihong Kim, Canute I. Vaz, Kin P. Cheung, Helmut Baumgart

Abstract

Current overshoot during forming has been shown to be a serious issue. Recently the current overshoot duration has been shown to be an important factor impacting device performance. Short duration overshoot in the range of ns yield better performance. But investigations of such short forming transients have so far been neglected. We establish, for the first time, a technique to measure transient currents during forming to understand the kinetics during forming. But the efforts to investigate the desirable ultra-short forming transients are severely limited due to experimental parasitic considerations. In this study we demonstrate a technique to accurately de-embed these parasitic components yielding accurate forming current transients in the ps range.

Conference Dates

April 28-30, 2014

Conference Location

Hsinchu

Conference Title

2014 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA)

Pub Type

Conferences

Keywords

RRAM, transient current, forming, current overshoot

Citation

Shrestha, P. , Nminibapiel, D. , Campbell, J. , Kim, J. , Vaz, C. , Cheung, K. and Baumgart, H. (2014), Accurate RRAM Transient Currents during Forming, 2014 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA), Hsinchu, -1 (Accessed December 15, 2024)