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The Series Resistance Component of Hot Carrier Degradation in Ultra-Short Channel Devices

Published

Author(s)

Jason P. Campbell, Kin P. Cheung, Anthony Oates

Abstract

Our measurements reveal that, similar to much larger power device geometries, hot carrier degradation in ultra-short channel devices involves (1) presumably defect generation-based parametric shifts in threshold voltage/transconductance and (2) an enhancement in series resistance. We show that the series resistance component, which has been seemingly overlooked for ultra-short channel devices, cannot be ignored.
Conference Dates
April 22-24, 2013
Conference Location
Hsinchu
Conference Title
2013 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA)

Citation

Campbell, J. , Cheung, K. and Oates, A. (2013), The Series Resistance Component of Hot Carrier Degradation in Ultra-Short Channel Devices, 2013 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA), Hsinchu, -1 (Accessed May 25, 2024)

Issues

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Created April 22, 2013, Updated February 19, 2017