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Experimentally Based Methodology for Charge Pumping Bulk Defect Trapping Correction
Published
Author(s)
Jason T. Ryan, Richard G. Southwick, Jason P. Campbell, Kin P. Cheung, Chadwin Young, John S. Suehle
Abstract
We develop a simple experimental approach to remove bulk trap contributions from charge pumping data collected on devices which suffer from large amounts of bulk dielectric electron trapping. The approach is more desirable and easier to implement than other simulation/device modeling based approaches. We demonstrate the approach using HfO2 based MOSFETs. Additionally, we provide an explanation for the smaller than expected bulk trap contribution to charge pumping current.
Proceedings Title
International Integrated Reliability Workshop Final Report
Ryan, J.
, Southwick, R.
, Campbell, J.
, Cheung, K.
, Young, C.
and Suehle, J.
(2011),
Experimentally Based Methodology for Charge Pumping Bulk Defect Trapping Correction, International Integrated Reliability Workshop Final Report, South Lake Tahoe, CA
(Accessed October 17, 2025)