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Experimentally Based Methodology for Charge Pumping Bulk Defect Trapping Correction

Published

Author(s)

Jason T. Ryan, Richard G. Southwick, Jason P. Campbell, Kin P. Cheung, Chadwin Young, John S. Suehle

Abstract

We develop a simple experimental approach to remove bulk trap contributions from charge pumping data collected on devices which suffer from large amounts of bulk dielectric electron trapping. The approach is more desirable and easier to implement than other simulation/device modeling based approaches. We demonstrate the approach using HfO2 based MOSFETs. Additionally, we provide an explanation for the smaller than expected bulk trap contribution to charge pumping current.
Proceedings Title
International Integrated Reliability Workshop Final Report
Conference Dates
October 16-21, 2011
Conference Location
South Lake Tahoe, CA
Conference Title
International Integrated Reliability Workshop

Citation

Ryan, J. , Southwick, R. , Campbell, J. , Cheung, K. , Young, C. and Suehle, J. (2011), Experimentally Based Methodology for Charge Pumping Bulk Defect Trapping Correction, International Integrated Reliability Workshop Final Report, South Lake Tahoe, CA (Accessed August 9, 2022)
Created December 15, 2011, Updated February 19, 2017