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Fast-Capacitance for Advanced Device Characterization



Pragya R. Shrestha, Kin P. Cheung, Jason T. Ryan, Jason P. Campbell, Helmut Baumgart


Fast-CV measurements are frequently being used to study transient phenomena associated with advanced devices. In this study, we show that many artifacts plague this measurement and then provide a proper method to legitimize fast-CV measurements as trustworthy. We show a remarkably accurate correspondence between a complete fast CV measurement, from accumulation to inversion, and a conventional CV measurement on the same device. The results distinguish fast-CV as a powerful tool for device characterization and reliability measurements.
Proceedings Title
2012 IEEE International Integrated Reliability Workshop Final Report
Conference Dates
October 13-17, 2013
Conference Location
Fallen Leaf Lake, CA
Conference Title
2012 IEEE International Integrated Reliability Workshop


Shrestha, P. , Cheung, K. , Ryan, J. , Campbell, J. and Baumgart, H. (2014), Fast-Capacitance for Advanced Device Characterization, 2012 IEEE International Integrated Reliability Workshop Final Report, Fallen Leaf Lake, CA, [online], (Accessed May 18, 2024)


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Created March 3, 2014, Updated February 19, 2017