Fast-Capacitance for Advanced Device Characterization
Pragya R. Shrestha, Kin P. Cheung, Jason T. Ryan, Jason P. Campbell, Helmut Baumgart
Fast-CV measurements are frequently being used to study transient phenomena associated with advanced devices. In this study, we show that many artifacts plague this measurement and then provide a proper method to legitimize fast-CV measurements as trustworthy. We show a remarkably accurate correspondence between a complete fast CV measurement, from accumulation to inversion, and a conventional CV measurement on the same device. The results distinguish fast-CV as a powerful tool for device characterization and reliability measurements.
2012 IEEE International Integrated Reliability Workshop Final Report
October 13-17, 2013
Fallen Leaf Lake, CA
2012 IEEE International Integrated Reliability Workshop
, Cheung, K.
, Ryan, J.
, Campbell, J.
and Baumgart, H.
Fast-Capacitance for Advanced Device Characterization, 2012 IEEE International Integrated Reliability Workshop Final Report, Fallen Leaf Lake, CA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=914753
(Accessed October 1, 2023)