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Frequency-Modulated Charge Pumping: Defect Measurements with High Gate Leakage

Published

Author(s)

Jason T. Ryan, Richard G. Southwick, Jason P. Campbell, Kin P. Cheung, John S. Suehle, Anthony Oates

Abstract

Charge pumping is one of the most relied upon techniques used to quantify interface defects in metal-oxide-semiconductor devices. However, conventional charge pumping is easily hindered by excessive gate leakage currents which render the technique unsuitable for advanced technology nodes. We demonstrate a new frequency-modulated charge pumping methodology in which we transform the quasi-DC charge pumping measurement into an AC measurement. The AC detection scheme is highly resistant to gate leakage currents and extends the usefulness of charge pumping as a defect monitoring tool for future technologies.
Citation
IEEE Electron Device Letters

Citation

Ryan, J. , Southwick, R. , Campbell, J. , Cheung, K. , Suehle, J. and Oates, A. (2013), Frequency-Modulated Charge Pumping: Defect Measurements with High Gate Leakage, IEEE Electron Device Letters, [online], https://doi.org/10.1109/LED.2013.2251315 (Accessed August 12, 2022)
Created February 28, 2013, Updated November 10, 2018