Ryan, J.
, Southwick, R.
, Campbell, J.
, Cheung, K.
, Suehle, J.
and Oates, A.
(2013),
Frequency-Modulated Charge Pumping: Defect Measurements with High Gate Leakage, IEEE Electron Device Letters, [online], https://doi.org/10.1109/LED.2013.2251315
(Accessed December 10, 2024)
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Frequency-Modulated Charge Pumping: Defect Measurements with High Gate Leakage
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, , , , , Anthony Oates
Abstract
Charge pumping is one of the most relied upon techniques used to quantify interface defects in metal-oxide-semiconductor devices. However, conventional charge pumping is easily hindered by excessive gate leakage currents which render the technique unsuitable for advanced technology nodes. We demonstrate a new frequency-modulated charge pumping methodology in which we transform the quasi-DC charge pumping measurement into an AC measurement. The AC detection scheme is highly resistant to gate leakage currents and extends the usefulness of charge pumping as a defect monitoring tool for future technologies.Citation
IEEE Electron Device Letters
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Created February 28, 2013, Updated November 10, 2018